Datasheet S102T02, S202T02 (Sharp) - 4
| 制造商 | Sharp |
| 描述 | Zero Cross Type Low Profile SIP 4pin Triac Output SSR |
| 页数 / 页 | 13 / 4 — S102T02 Series S202T02 Series. Absolute Maximum Ratings. S102T02. … |
| 文件格式/大小 | PDF / 245 Kb |
| 文件语言 | 英语 |
S102T02 Series S202T02 Series. Absolute Maximum Ratings. S102T02. S202T02. Electro-optical Characteristics
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S102T02 Series S202T02 Series
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Absolute Maximum Ratings
(Ta=25˚C) Parameter Symbol Rating Unit Forward current I *3 F 50 mA Input Reverse voltage VR 6 V RMS ON-state current I *3 T (rms) 2 A Peak one cycle surge current I *4 surge 20 A Repetitive
S102T02
400 VDRM V peak OFF-state voltage
S202T02
600 Output Non-Repetitive
S102T02
400 VDSM V peak OFF-state voltage
S202T02
600 1.5mm Critical rate of rise of ON-state current dIT/dt 40 A/µs Operating frequency f 45 to 65 Hz *1Isolation voltage Viso(rms) 3.0 kV Operating temperature Soldering area Topr −25 to +100 ˚C Storage temperature Tstg −30 to +125 ˚C *2Soldering temperature Tsol 260 ˚C *1 40 to 60%RH, AC for 1minute, f=60Hz *2 For 10s *3 Refer to Fig.1, Fig.2 *4 f=60Hz sine wave, Tj=25˚C start ■
Electro-optical Characteristics
(Ta=25˚C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage VF IF=20mA − 1.2 1.4 V Input Reverse current IR VR=3V − − 100 µA Repetitive peak OFF-state current IDRM VD=VDRM − − 100 µA ON-state voltage VT(rms) IT(rms)=2A, Resistance load, IF=20mA − − 1.7 V Output Holding current IH − − − 25 mA Critical rate of rise of OFF-state voltage dV/dt VD=2/3•VDRM 30 − − V/µs Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c Tj=125˚C, VD=2/3•VDRM, dIT/dt=−1.0A/ms 4 − − V/µs Minimum trigger current IFT VD=6V, RL=30Ω − − 8 mA Zero cross voltage VOX IF=8mA − − 35 V Isolation resistance RISO DC500V, 40 to 60%RH 1010 − − Ω VD(rms)=100V, AC50Hz, IF=20mA
S102T02
− − 10 IT(rms)=2A, Resistance load Transfer Turn-on time ton ms charac- VD(rms)=200V, AC50Hz, IF=20mA teristics
S202T02
− − 10 IT(rms)=2A, Resistance load VD(rms)=100V, AC50Hz, IF=20mA
S102T02
− − 10 IT(rms)=2A, Resistance load Turn-off time toff ms VD(rms)=200V, AC50Hz, IF=20mA
S202T02
− − 10 IT(rms)=2A, Resistance load Sheet No.: D4-A01601EN 4
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Absolute Maximum Ratings
(Ta=25˚C) Parameter Symbol Rating Unit Forward current I *3 F 50 mA Input Reverse voltage VR 6 V RMS ON-state current I *3 T (rms) 2 A Peak one cycle surge current I *4 surge 20 A Repetitive
S102T02
400 VDRM V peak OFF-state voltage
S202T02
600 Output Non-Repetitive
S102T02
400 VDSM V peak OFF-state voltage
S202T02
600 1.5mm Critical rate of rise of ON-state current dIT/dt 40 A/µs Operating frequency f 45 to 65 Hz *1Isolation voltage Viso(rms) 3.0 kV Operating temperature Soldering area Topr −25 to +100 ˚C Storage temperature Tstg −30 to +125 ˚C *2Soldering temperature Tsol 260 ˚C *1 40 to 60%RH, AC for 1minute, f=60Hz *2 For 10s *3 Refer to Fig.1, Fig.2 *4 f=60Hz sine wave, Tj=25˚C start ■
Electro-optical Characteristics
(Ta=25˚C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage VF IF=20mA − 1.2 1.4 V Input Reverse current IR VR=3V − − 100 µA Repetitive peak OFF-state current IDRM VD=VDRM − − 100 µA ON-state voltage VT(rms) IT(rms)=2A, Resistance load, IF=20mA − − 1.7 V Output Holding current IH − − − 25 mA Critical rate of rise of OFF-state voltage dV/dt VD=2/3•VDRM 30 − − V/µs Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c Tj=125˚C, VD=2/3•VDRM, dIT/dt=−1.0A/ms 4 − − V/µs Minimum trigger current IFT VD=6V, RL=30Ω − − 8 mA Zero cross voltage VOX IF=8mA − − 35 V Isolation resistance RISO DC500V, 40 to 60%RH 1010 − − Ω VD(rms)=100V, AC50Hz, IF=20mA
S102T02
− − 10 IT(rms)=2A, Resistance load Transfer Turn-on time ton ms charac- VD(rms)=200V, AC50Hz, IF=20mA teristics
S202T02
− − 10 IT(rms)=2A, Resistance load VD(rms)=100V, AC50Hz, IF=20mA
S102T02
− − 10 IT(rms)=2A, Resistance load Turn-off time toff ms VD(rms)=200V, AC50Hz, IF=20mA
S202T02
− − 10 IT(rms)=2A, Resistance load Sheet No.: D4-A01601EN 4