Datasheet IRFZ24 (Vishay) - 5
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 7 / 5 — IRFZ24. Fig. 11 - Maximum Effective Transient Thermal Impedance, … |
| 文件格式/大小 | PDF / 204 Kb |
| 文件语言 | 英语 |
IRFZ24. Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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文件文字版本
IRFZ24
www.vishay.com Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary t tp p to obtain required I V AS DD R D.U.T. G A + V V - DD DS IAS 10 V t 0.01 I p Ω AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test
S21-1262-Rev. D, 27-Dec-2021
5
Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary t tp p to obtain required I V AS DD R D.U.T. G A + V V - DD DS IAS 10 V t 0.01 I p Ω AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test
S21-1262-Rev. D, 27-Dec-2021
5
Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000