Datasheet BT138-800E (NXP) - 3
| 制造商 | NXP |
| 描述 | 4Q Triac |
| 页数 / 页 | 13 / 3 — NXP Semiconductors. BT138-800E. 4Q Triac. 7. Limiting values. Table 4. … |
| 文件格式/大小 | PDF / 190 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BT138-800E. 4Q Triac. 7. Limiting values. Table 4. Limiting values. Symbol. Parameter. Conditions. Min. Max. Unit
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NXP Semiconductors BT138-800E 4Q Triac 7. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 800 V IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; - 12 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; - 95 A current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; - 105 A tp = 16.7 ms I2t I2t for fusing tp = 10 ms; sine-wave pulse - 45 A2s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs T2+ G+ IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs T2+ G- IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs T2- G- IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 10 A/µs T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C BT138-800E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 3 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Limiting values 8. Thermal characteristics 9. Characteristics 10. Package outline 11. Legal information
NXP Semiconductors BT138-800E 4Q Triac 7. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 800 V IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; - 12 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; - 95 A current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; - 105 A tp = 16.7 ms I2t I2t for fusing tp = 10 ms; sine-wave pulse - 45 A2s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs T2+ G+ IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs T2+ G- IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs T2- G- IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 10 A/µs T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C BT138-800E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 3 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Limiting values 8. Thermal characteristics 9. Characteristics 10. Package outline 11. Legal information