Datasheet MB2M, MB4M, MB6M (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Miniature Glass Passivated Single-Phase Bridge Rectifiers |
| 页数 / 页 | 4 / 2 — MB2M, MB4M, MB6M. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST CONDITIONS. … |
| 文件格式/大小 | PDF / 86 Kb |
| 文件语言 | 英语 |
MB2M, MB4M, MB6M. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST CONDITIONS. SYMBOL MB2M. MB4M. MB6M. UNIT. THERMAL CHARACTERISTICS. Notes
该数据表的模型线
文件文字版本
MB2M, MB4M, MB6M
www.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT
Maximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
RθJA (1) 85 Typical thermal resistance R (2) 70 °C/W θJA RθJL (1) 20
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2M-E3/45 0.22 45 100 Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 35 T = 40 °C Aluminum Substrate A Single Half Sine-Wave 0.7 30 rrent (A) u 0.6 rrent (A) 25 u 0.5 20 f = 50 Hz f = 60 Hz rge C 0.4 Glass u Epoxy 15 ard Rectified C 0.3 PCB ard S wro rw o 10 0.2 F k a age F 0.1 Resistive or Inductive Load 5 er Pe 1.0 Cycle v A 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 15-Jul-2020
2
Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT
Maximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
RθJA (1) 85 Typical thermal resistance R (2) 70 °C/W θJA RθJL (1) 20
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2M-E3/45 0.22 45 100 Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 35 T = 40 °C Aluminum Substrate A Single Half Sine-Wave 0.7 30 rrent (A) u 0.6 rrent (A) 25 u 0.5 20 f = 50 Hz f = 60 Hz rge C 0.4 Glass u Epoxy 15 ard Rectified C 0.3 PCB ard S wro rw o 10 0.2 F k a age F 0.1 Resistive or Inductive Load 5 er Pe 1.0 Cycle v A 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 15-Jul-2020
2
Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000