Datasheet BC807 (Nexperia) - 5
| 制造商 | Nexperia |
| 描述 | 45 V, 500 mA PNP General-Purpose Transistors |
| 页数 / 页 | 13 / 5 — Nexperia. BC807 series. 45 V, 500 mA PNP general-purpose transistors. 10. … |
| 修订版 | 30062022 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Nexperia. BC807 series. 45 V, 500 mA PNP general-purpose transistors. 10. Characteristics Table 8. Characteristics. Symbol
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Nexperia BC807 series 45 V, 500 mA PNP general-purpose transistors 10. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base IC = -100 µA; IE = 0 A; Tamb = 25 °C -50 - - V breakdown voltage V(BR)CEO collector-emitter IC = -10 mA; IE = 0 A; Tamb = 25 °C -45 - - V breakdown voltage V(BR)EBO emitter-base IE = -100 µA; IC = 0 A; Tamb = 25 °C -5 - - V breakdown voltage ICBO collector-base VCB = -20 V; IE = 0 A; Tamb = 25 °C - - -100 nA cut-of current VCB = -20 V; IE = 0 A; Tj = 150 °C - - -5 μA IEBO emitter-base VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA cut-of current hFE DC current gain BC807 VCE = -1 V; IC = -100 mA; Tamb = 25 °C [1] 100 - 600 BC807-16 [1] 100 - 250 BC807-25 [1] 160 - 400 BC807-40 [1] 250 - 600 hFE DC current gain VCE = -1 V; IC = -500 mA; Tamb = 25 °C [1] 40 - - VCEsat collector-emitter IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] - - -700 mV saturation voltage VBE base-emitter voltage VCE = -1 V; IC = -500 mA; Tamb = 25 °C [1] - - -1.2 V [2] fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; 80 - - MHz Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz; - 5 - pF Tamb = 25 °C [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 [2] VBE decreases by about 2 mV/K with increasing temperature. BC807_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet Rev. 8 — 1 July 2022 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
Nexperia BC807 series 45 V, 500 mA PNP general-purpose transistors 10. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base IC = -100 µA; IE = 0 A; Tamb = 25 °C -50 - - V breakdown voltage V(BR)CEO collector-emitter IC = -10 mA; IE = 0 A; Tamb = 25 °C -45 - - V breakdown voltage V(BR)EBO emitter-base IE = -100 µA; IC = 0 A; Tamb = 25 °C -5 - - V breakdown voltage ICBO collector-base VCB = -20 V; IE = 0 A; Tamb = 25 °C - - -100 nA cut-of current VCB = -20 V; IE = 0 A; Tj = 150 °C - - -5 μA IEBO emitter-base VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA cut-of current hFE DC current gain BC807 VCE = -1 V; IC = -100 mA; Tamb = 25 °C [1] 100 - 600 BC807-16 [1] 100 - 250 BC807-25 [1] 160 - 400 BC807-40 [1] 250 - 600 hFE DC current gain VCE = -1 V; IC = -500 mA; Tamb = 25 °C [1] 40 - - VCEsat collector-emitter IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] - - -700 mV saturation voltage VBE base-emitter voltage VCE = -1 V; IC = -500 mA; Tamb = 25 °C [1] - - -1.2 V [2] fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; 80 - - MHz Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz; - 5 - pF Tamb = 25 °C [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 [2] VBE decreases by about 2 mV/K with increasing temperature. BC807_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet Rev. 8 — 1 July 2022 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents