Datasheet SI2302DS (Nexperia) - 3
| 制造商 | Nexperia |
| 描述 | N-Channel Enhancement Mode Field-Effect Transistor |
| 页数 / 页 | 13 / 3 — Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect … |
| 文件格式/大小 | PDF / 366 Kb |
| 文件语言 | 英语 |
Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect transistor. Quick reference data. Table 2:
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Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 20 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V − 2.5 A Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A 56 85 mΩ VGS = 2.5 V; ID = 3.1 A 77 115 mΩ
6. Limiting values Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 20 V VGS gate-source voltage (DC) − ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 − 2.5 A Tsp = 70 °C; VGS = 4.5 V; Figure 2 − 2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 10 A Ptot total power dissipation Tsp = 25 °C; Figure 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C − 0.7 A 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 2 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers
Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 20 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V − 2.5 A Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A 56 85 mΩ VGS = 2.5 V; ID = 3.1 A 77 115 mΩ
6. Limiting values Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 20 V VGS gate-source voltage (DC) − ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 − 2.5 A Tsp = 70 °C; VGS = 4.5 V; Figure 2 − 2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 10 A Ptot total power dissipation Tsp = 25 °C; Figure 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C − 0.7 A 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 2 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers