Datasheet SI2302DS (Nexperia) - 6
| 制造商 | Nexperia |
| 描述 | N-Channel Enhancement Mode Field-Effect Transistor |
| 页数 / 页 | 13 / 6 — Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect … |
| 文件格式/大小 | PDF / 366 Kb |
| 文件语言 | 英语 |
Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect transistor. Characteristics. Table 5:. Symbol Parameter
该数据表的模型线
文件文字版本
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Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V 20 − − V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 0.65 − − V IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C − 0.01 1.0 µA Tj = 55 °C − − 10 µA IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V − 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8 − 56 85 mΩ VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8 − 77 115 mΩ
Dynamic characteristics
gfs forward transconductance VDS = 5 V; ID = 3.6 A − 8 − S Qg(tot) total gate charge VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13 − 5.4 10 nC Qgs gate-source charge − 0.65 − nC Qgd gate-drain (Miller) charge − 1.6 − nC Ciss input capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 − 230 − pF Coss output capacitance − 125 − pF Crss reverse transfer capacitance − 80 − pF td(on) turn-on delay time VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω − 12 20 ns tr rise time − 23 35 ns td(off) turn-off delay time − 50 100 ns tf fall time − 34 50 ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12 − 0.8 1.2 V 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 5 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers
Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V 20 − − V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 0.65 − − V IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C − 0.01 1.0 µA Tj = 55 °C − − 10 µA IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V − 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8 − 56 85 mΩ VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8 − 77 115 mΩ
Dynamic characteristics
gfs forward transconductance VDS = 5 V; ID = 3.6 A − 8 − S Qg(tot) total gate charge VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13 − 5.4 10 nC Qgs gate-source charge − 0.65 − nC Qgd gate-drain (Miller) charge − 1.6 − nC Ciss input capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 − 230 − pF Coss output capacitance − 125 − pF Crss reverse transfer capacitance − 80 − pF td(on) turn-on delay time VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω − 12 20 ns tr rise time − 23 35 ns td(off) turn-off delay time − 50 100 ns tf fall time − 34 50 ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12 − 0.8 1.2 V 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 5 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers