Datasheet D44VH10, D45VH10 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Complementary Silicon Power Transistors |
| 页数 / 页 | 5 / 2 — D44VH10 (NPN), D45VH10 (PNP). ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 文件格式/大小 | PDF / 116 Kb |
| 文件语言 | 英语 |
D44VH10 (NPN), D45VH10 (PNP). ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS
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D44VH10 (NPN), D45VH10 (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc (IC = 25 mAdc, IB = 0) 80 − − Collector−Emitter Cutoff Current ICEV mAdc (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) − − 10 (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100°C) − − 100 Emitter Base Cutoff Current IEBO mAdc (VEB = 7.0 Vdc, IC = 0) − − 10
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 2.0 Adc, VCE = 1.0 Vdc) 35 − − (IC = 4.0 Adc, VCE = 1.0 Vdc) 20 − − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8.0 Adc, IB = 0.4 Adc) D44VH10 − − 0.4 (IC = 8.0 Adc, IB = 0.8 Adc) D45VH10 − − 1.0 (IC = 15 Adc, IB = 3.0 Adc, TC = 100°C) D44VH10 − − 0.8 D45VH10 − − 1.5 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 8.0 Adc, IB = 0.4 Adc) D44VH10 − − 1.2 (IC = 8.0 Adc, IB = 0.8 Adc) D45VH10 − − 1.0 (IC = 8.0 Adc, IB = 0.4 Adc, TC = 100°C) D44VH10 − − 1.1 (IC = 8.0 Adc, IB = 0.8 Adc, TC = 100°C) D45VH10 − − 1.5
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product fT MHz (IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz) − 50 − Output Capacitance Cob pF (VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz) D44VH10 − 120 − D45VH10 − 275 −
SWITCHING CHARACTERISTICS
Delay Time td − − 50 ns Rise Time tr − − 250 (VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc) Storage Time ts − − 700 Fall Time tf − − 90 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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D44VH10 (NPN), D45VH10 (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc (IC = 25 mAdc, IB = 0) 80 − − Collector−Emitter Cutoff Current ICEV mAdc (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) − − 10 (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100°C) − − 100 Emitter Base Cutoff Current IEBO mAdc (VEB = 7.0 Vdc, IC = 0) − − 10
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 2.0 Adc, VCE = 1.0 Vdc) 35 − − (IC = 4.0 Adc, VCE = 1.0 Vdc) 20 − − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8.0 Adc, IB = 0.4 Adc) D44VH10 − − 0.4 (IC = 8.0 Adc, IB = 0.8 Adc) D45VH10 − − 1.0 (IC = 15 Adc, IB = 3.0 Adc, TC = 100°C) D44VH10 − − 0.8 D45VH10 − − 1.5 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 8.0 Adc, IB = 0.4 Adc) D44VH10 − − 1.2 (IC = 8.0 Adc, IB = 0.8 Adc) D45VH10 − − 1.0 (IC = 8.0 Adc, IB = 0.4 Adc, TC = 100°C) D44VH10 − − 1.1 (IC = 8.0 Adc, IB = 0.8 Adc, TC = 100°C) D45VH10 − − 1.5
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product fT MHz (IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz) − 50 − Output Capacitance Cob pF (VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz) D44VH10 − 120 − D45VH10 − 275 −
SWITCHING CHARACTERISTICS
Delay Time td − − 50 ns Rise Time tr − − 250 (VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc) Storage Time ts − − 700 Fall Time tf − − 90 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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