Datasheet ZTX788B (Diodes)

PNP SILICON PLANAR MEDIUM POWER ZTX788B HIGH GAIN TRANSISTOR ZTX788B ISSUE 2 – APRIL 94 ELECTRICAL CHARACTERISTICS (at T FEATURES amb = 25°C) * 15 Volt VCEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 300 at IC=2 Amps Transition Frequency f * Very low saturation voltage T 100 MHz IC=-50mA, VCE=-5V f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz * Flash gun convertors B E Output Capacitance Cobo 25 pF VCB=-10V, f=1MHz * Battery powered circuits E-Line * Motor drivers Switching Times ton 35 ns IC=-500mA, IB1=-50mA TO92 Compatible toff 400 ns IB2=-50mA, VCC=-10V ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% PARAMETER SYMBOL VALUE UNIT Col ector-Base Voltage V THERMAL CHARACTERISTICS CBO -15 V Collector-Emitter Voltage VCEO -15 V PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage VEBO -5 V Thermal Resistance: Junction to Ambient1 Rth(j-amb)1 175 °C/W Peak Pulse Current ICM -8 A Junction to Ambient2 Rth(j-amb)2 † 116 °C/W Junction to Case Rth(j-case) 70 °C/W Continuous Collector Current IC -3 A † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Practical Power Dissipation* Ptotp 1.5 W Power Dissipation at Tamb=25°C Ptot 1 W derate above 25°C 5.7 mW/°C Operating and Storage Temperature Range tj:tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Col ector-Base Breakdown V(BR)CBO -15 V IC=-100µA 2.5 200 Voltage tts) D=1 (D.C.) a W 2.0 t1 Col ector-Emitter Breakdown V D=t1/tP (BR)CEO -15 V IC=-10mA* W ( °C/ Case temperature Voltage - n oi 1.5 nce ( tP Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µA ta 100 D=0.5 Voltage sipat is Ambient temperat esis 1.0 Collector Cut-Off Current I D CBO -0.1 µA VCB=-10V r l R a we D=0.2 Emitter Cut-Off Current I 0.5 ur rm EBO -0.1 µA VEB=-4V e e D=0.1 h T Single Pulse Collector-Emitter Saturation VCE(sat) -0.15 V IC=-0.5A, IB=-2.5mA* ax Po M 0 0 Voltage -0.25 V IC=-1A, IB=-5mA* -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 -0.45 V IC=-2A, IB=-10mA* T -Temperature (°C) Pulse Width (seconds) Base-Emitter VBE(sat) -0.9 V IC=-1A, IB=-5mA*
Derating curve Maximum transient thermal impedance
Saturation Voltage Base-Emitter VBE(on) -0.75 V IC=-1A, VCE=-2V* Turn-On Voltage Static Forward Current hFE 500 1500 IC=-10mA, VCE=-2V* Transfer Ratio 400 IC=-1A, VCE=-2V* 300 IC=-2A, VCE=-2V* 150 IC=-6A, VCE=-2V* 3-274 3-273