Datasheet 2SJ160, 2SJ161, 2SJ162 (Renesas) - 4

2SJ160, 2SJ161, 2SJ162 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage Symbol
VDSX 2SJ160 Value
–120 2SJ161
2SJ162 –140
–160 Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Unit
V VGSS
ID ±15
–7 V
A IDR
Note 1
Pch –7
100 A
W Tch
Tstg 150
–55 to +150 °C
°C 1. Value at Tc = 25°C Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage 2SJ160 Symbol
V (BR) DSX 2SJ161
2SJ162 Min
–120 Typ
— Max
— Unit
V –140
–160 —
— —
— V
V Test Conditions
ID = –10 mA, VGS = 10 V Gate to source breakdown voltage
Gate to source cutoff voltage V (BR) GSS
VGS (off) ±15
–0.15 —
— —
–1.45 V
V IG = ±100 µA, VDS = 0
ID = –100 mA, VDS = –10 V Drain to source saturation voltage
Forward transfer admittance VDS (sat)
|yfs| —
0.7 —
1.0 –12
1.4 V
S ID = –7 A, VGS = 0
Note 2
ID = –3 A, VDS = –10 V Input capacitance
Output capacitance Ciss
Coss —
— 900
400 —
— pF
pF VGS = 5 V, VDS = –10 V,
f = 1 MHz Reverse transfer capacitance
Turn-on time Crss
ton —
— 40
230 —
— pF
ns VDD = –20 V ID = –4 A toff — 110 — ns Turn-off time
Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 Note 2