Datasheet MTP50P03HDLG (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 |
| 页数 / 页 | 8 / 3 — MTP50P03HDLG. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| 文件格式/大小 | PDF / 113 Kb |
| 文件语言 | 英语 |
MTP50P03HDLG. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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MTP50P03HDLG TYPICAL ELECTRICAL CHARACTERISTICS
100 100 TJ = 25°C VGS = 10 V 5 V VDS ≥ 10 V TJ = -55°C 8 V 4.5 V 25°C 80 80 100°C 6 V (AMPS) (AMPS) 4 V 60 60 3.5 V 40 40 , DRAIN CURRENT , DRAIN CURRENT I D 3 V I D 20 20 2.5 V 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.5 1.9 2.3 2.7 3.1 3.5 3.9 4.3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.029 0.022 VGS = 5.0 V TJ = 25°C VGS = 5 V 0.027 0.021 ANCE (OHMS) ANCE (OHMS) 0.025 T 0.020 J = 100°C 0.023 0.019 25°C 0.021 0.018 O-SOURCE RESIST O-SOURCE RESIST 0.019 0.017 10 V , DRAIN-T -55°C 0.017 , DRAIN-T 0.016 DS(on) 0.015 DS(on) 0.015 R R 0 20 40 60 80 100 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
1.35 1000 V V ANCE GS = 5 V GS = 0 V ID = 25 A 1.25 TJ = 125°C 1.15 100 O-SOURCE RESIST (NORMALIZED) 1.05 , LEAKAGE (nA) , DRAIN-T I DSS 0.95 100°C DS(on)R 0.85 10 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage www.onsemi.com 3
100 100 TJ = 25°C VGS = 10 V 5 V VDS ≥ 10 V TJ = -55°C 8 V 4.5 V 25°C 80 80 100°C 6 V (AMPS) (AMPS) 4 V 60 60 3.5 V 40 40 , DRAIN CURRENT , DRAIN CURRENT I D 3 V I D 20 20 2.5 V 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.5 1.9 2.3 2.7 3.1 3.5 3.9 4.3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.029 0.022 VGS = 5.0 V TJ = 25°C VGS = 5 V 0.027 0.021 ANCE (OHMS) ANCE (OHMS) 0.025 T 0.020 J = 100°C 0.023 0.019 25°C 0.021 0.018 O-SOURCE RESIST O-SOURCE RESIST 0.019 0.017 10 V , DRAIN-T -55°C 0.017 , DRAIN-T 0.016 DS(on) 0.015 DS(on) 0.015 R R 0 20 40 60 80 100 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
1.35 1000 V V ANCE GS = 5 V GS = 0 V ID = 25 A 1.25 TJ = 125°C 1.15 100 O-SOURCE RESIST (NORMALIZED) 1.05 , LEAKAGE (nA) , DRAIN-T I DSS 0.95 100°C DS(on)R 0.85 10 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage www.onsemi.com 3