Datasheet MTP50P03HDLG (ON Semiconductor) - 6
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 |
| 页数 / 页 | 8 / 6 — MTP50P03HDLG. Figure 11. Reverse Recovery Time (trr). SAFE OPERATING … |
| 文件格式/大小 | PDF / 113 Kb |
| 文件语言 | 英语 |
MTP50P03HDLG. Figure 11. Reverse Recovery Time (trr). SAFE OPERATING AREA. Figure 12. Maximum Rated Forward Biased
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MTP50P03HDLG
di/dt = 300 A/ms Standard Cell Density trr High Cell Density trr tb ta , SOURCE CURRENT I S t, TIME
Figure 11. Reverse Recovery Time (trr) SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance the maximum simultaneous drain−to−source voltage and dissipated in the transistor while in avalanche must be less drain current that a transistor can handle safely when it is than the rated limit and must be adjusted for operating forward biased. Curves are based upon maximum peak conditions differing from those specified. Although industry junction temperature and a case temperature (TC) of 25°C. practice is to rate in terms of energy, avalanche energy Peak repetitive pulsed power limits are determined by using capability is not a constant. The energy rating decreases the thermal response data in conjunction with the procedures non−linearly with an increase of peak current in avalanche discussed in AN569, “Transient Thermal Resistance − and peak junction temperature. General Data and Its Use.” Although many E−FETs can withstand the stress of Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated (IDM) nor rated voltage (VDSS) is exceeded, and that the continuous current (ID), in accordance with industry transition time (tr, tf) does not exceed 10 ms. In addition the custom. The energy rating must be derated for temperature total power averaged over a complete switching cycle must as shown in the accompanying graph (Figure 13). Maximum not exceed (TJ(MAX) − TC)/(RqJC). energy at currents below rated continuous ID can safely be A power MOSFET designated E−FET can be safely used assumed to equal the values indicated. in switching circuits with unclamped inductive loads. For 1000 1400 VGS = 20 V ID = 50 A SINGLE PULSE 1200 TC = 25°C O-SOURCE (mJ) 1000 (AMPS) 100 100 ms 800 600 1 ms 10 ALANCHE ENERGY 10 ms V A 400 , DRAIN CURRENT I D RDS(on) LIMIT dc , SINGLE PULSE DRAIN-T THERMAL LIMIT AS 200 E PACKAGE LIMIT 1 0 0.1 1.0 10 100 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature www.onsemi.com 6
di/dt = 300 A/ms Standard Cell Density trr High Cell Density trr tb ta , SOURCE CURRENT I S t, TIME
Figure 11. Reverse Recovery Time (trr) SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance the maximum simultaneous drain−to−source voltage and dissipated in the transistor while in avalanche must be less drain current that a transistor can handle safely when it is than the rated limit and must be adjusted for operating forward biased. Curves are based upon maximum peak conditions differing from those specified. Although industry junction temperature and a case temperature (TC) of 25°C. practice is to rate in terms of energy, avalanche energy Peak repetitive pulsed power limits are determined by using capability is not a constant. The energy rating decreases the thermal response data in conjunction with the procedures non−linearly with an increase of peak current in avalanche discussed in AN569, “Transient Thermal Resistance − and peak junction temperature. General Data and Its Use.” Although many E−FETs can withstand the stress of Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated (IDM) nor rated voltage (VDSS) is exceeded, and that the continuous current (ID), in accordance with industry transition time (tr, tf) does not exceed 10 ms. In addition the custom. The energy rating must be derated for temperature total power averaged over a complete switching cycle must as shown in the accompanying graph (Figure 13). Maximum not exceed (TJ(MAX) − TC)/(RqJC). energy at currents below rated continuous ID can safely be A power MOSFET designated E−FET can be safely used assumed to equal the values indicated. in switching circuits with unclamped inductive loads. For 1000 1400 VGS = 20 V ID = 50 A SINGLE PULSE 1200 TC = 25°C O-SOURCE (mJ) 1000 (AMPS) 100 100 ms 800 600 1 ms 10 ALANCHE ENERGY 10 ms V A 400 , DRAIN CURRENT I D RDS(on) LIMIT dc , SINGLE PULSE DRAIN-T THERMAL LIMIT AS 200 E PACKAGE LIMIT 1 0 0.1 1.0 10 100 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature www.onsemi.com 6