Datasheet FHX35LG (Eudyna Devices)
| 制造商 | Eudyna Devices |
| 描述 | Super Low Noise HEMT |
| 页数 / 页 | 6 / 1 — FHX35LG. Super Low Noise HEMT. FEATURES. DESCRIPTION. ABSOLUTE MAXIMUM … |
| 文件格式/大小 | PDF / 97 Kb |
| 文件语言 | 英语 |
FHX35LG. Super Low Noise HEMT. FEATURES. DESCRIPTION. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25. Item. Symbol. Rating. Unit
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FHX35LG Super Low Noise HEMT FEATURES
• Low Noise Figure: 1.2B (Typ.)@f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C) Item Symbol Rating Unit Drain-Source Voltage
VDS 4.0 V
Gate-Source Voltage
VGS -3.0 V
Total Power Dissipation
Pt* 290 mW
Storage Temperature
Tstg -65 to +175 °C
Channel Temperature
Tch 175 °C
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 3 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C) Limit Item Symbol Test Conditions Unit Min. Typ. Max. Saturated Drain Current
IDSS VDS = 2V, VGS = 0V 15 40 85 mA
Transconductance
gm VDS = 2V, IDS = 10mA 40 60 - mS
Pinch-off Voltage
V V -0.2 -1.0 -2.0 p DS = 2V, IDS = 1mA V
Gate Source Breakdown Voltage
VGSO I -3.0 - - GS = -10µA V
Noise Figure
NF - 1.2 1.6 V dB DS = 3V, IDS = 10mA
Associated Gain
Gas f = 12GHz 8.5 10.0 - dB
Thermal Resistance
Rth Channel to Case - 220 300 °C/W
AVAILABLE CASE STYLES:
LG
Note:
RF parameters are measured on a sample basis as follows:
Lot qty. Sample qty. Accept/Reject
1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.2 October 2004 1
• Low Noise Figure: 1.2B (Typ.)@f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C) Item Symbol Rating Unit Drain-Source Voltage
VDS 4.0 V
Gate-Source Voltage
VGS -3.0 V
Total Power Dissipation
Pt* 290 mW
Storage Temperature
Tstg -65 to +175 °C
Channel Temperature
Tch 175 °C
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 3 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C) Limit Item Symbol Test Conditions Unit Min. Typ. Max. Saturated Drain Current
IDSS VDS = 2V, VGS = 0V 15 40 85 mA
Transconductance
gm VDS = 2V, IDS = 10mA 40 60 - mS
Pinch-off Voltage
V V -0.2 -1.0 -2.0 p DS = 2V, IDS = 1mA V
Gate Source Breakdown Voltage
VGSO I -3.0 - - GS = -10µA V
Noise Figure
NF - 1.2 1.6 V dB DS = 3V, IDS = 10mA
Associated Gain
Gas f = 12GHz 8.5 10.0 - dB
Thermal Resistance
Rth Channel to Case - 220 300 °C/W
AVAILABLE CASE STYLES:
LG
Note:
RF parameters are measured on a sample basis as follows:
Lot qty. Sample qty. Accept/Reject
1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.2 October 2004 1