Datasheet 2N5655G, 2N5657G (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Plastic NPN Silicon High-Voltage Power Transistors |
| 页数 / 页 | 6 / 4 — 2N5655G, 2N5657G. Figure 5. “On” Voltages. Figure 6. Capacitance. Figure … |
| 文件格式/大小 | PDF / 189 Kb |
| 文件语言 | 英语 |
2N5655G, 2N5657G. Figure 5. “On” Voltages. Figure 6. Capacitance. Figure 7. Turn−On Time. Figure 8. Turn−Off Time
该数据表的模型线
文件文字版本
2N5655G, 2N5657G
1.0 0.8 VBE(sat) @ IC/IB = 10 TS) 0.6 VBE @ VCE = 10 V TAGE (VOL 0.4 , VOL V VCE(sat) @ IC/IB = 10 0.2 TJ = + 25°C IC/IB = 5.0 010 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
300 200 TJ = + 25°C Cib 100 70 ANCE (pF) 50 ACIT 30 C, CAP 20 Cob 100.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
10 10 I 5.0 t C/IB = 10 r I V C/IB = 10 CC = 300 V, VBE(off) = 2.0 V 5.0 2.0 (2N5657, only) VCC = 100 V, VBE(off) = 0 V 1.0 2.0 ts (s)μ 0.5 (s)μ t 1.0 t d f 0.2 t, TIME t, TIME 0.1 0.5 VCC = 100 V 0.05 0.2 VCC = 300 V 0.02 (Type 2N5657, only) 0.01 0.1 1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Turn−On Time Figure 8. Turn−Off Time http://onsemi.com 4
1.0 0.8 VBE(sat) @ IC/IB = 10 TS) 0.6 VBE @ VCE = 10 V TAGE (VOL 0.4 , VOL V VCE(sat) @ IC/IB = 10 0.2 TJ = + 25°C IC/IB = 5.0 010 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
300 200 TJ = + 25°C Cib 100 70 ANCE (pF) 50 ACIT 30 C, CAP 20 Cob 100.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
10 10 I 5.0 t C/IB = 10 r I V C/IB = 10 CC = 300 V, VBE(off) = 2.0 V 5.0 2.0 (2N5657, only) VCC = 100 V, VBE(off) = 0 V 1.0 2.0 ts (s)μ 0.5 (s)μ t 1.0 t d f 0.2 t, TIME t, TIME 0.1 0.5 VCC = 100 V 0.05 0.2 VCC = 300 V 0.02 (Type 2N5657, only) 0.01 0.1 1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Turn−On Time Figure 8. Turn−Off Time http://onsemi.com 4