Datasheet 2N7077 (Inchange Semiconductor) - 2
| 制造商 | Inchange Semiconductor |
| 描述 | N-Channel MOSFET Transistor |
| 页数 / 页 | 2 / 2 — isc N-Channel MOSFET Transistor. 2N7077. ELECTRICAL CHARACTERISTICS. … |
| 文件格式/大小 | PDF / 308 Kb |
| 文件语言 | 英语 |
isc N-Channel MOSFET Transistor. 2N7077. ELECTRICAL CHARACTERISTICS. TC=25. unless otherwise specified. SYMBOL. PARAMETER. CONDITIONS
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isc N-Channel MOSFET Transistor 2N7077 ELECTRICAL CHARACTERISTICS
（
TC=25
℃
unless otherwise specified
）
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 400 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2.0 -- 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=9.5A -- -- 0.3 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- -- ±100 nA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 -- -- 25 uA VSD Forward On-Voltage IS=15A; VGS= 0 0.85 -- 1.4 V
Product Disclaimer
ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
www.iscsemi.com
2 Document Outline FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise
（
TC=25
℃
unless otherwise specified
）
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 400 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2.0 -- 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=9.5A -- -- 0.3 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- -- ±100 nA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 -- -- 25 uA VSD Forward On-Voltage IS=15A; VGS= 0 0.85 -- 1.4 V
Product Disclaimer
ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
www.iscsemi.com
2 Document Outline FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise