Datasheet MMBT2369A (ON Semiconductor) - 4

MMBT23 Typical Performance Characteristics 69A ) V ( — NPN Sw E
200 0.5
AG
β
LT = 10 IN V C = E 1.0V O A
0.4 150
G R V T E N T E IT
0.3
R 125 ° C M R E itching T
100
U 25 °C R- C
0.2
C O 25 ° C T 125 °C C - D
50
E L
0.1
- 40 °C FE - 40 °C L h O C r - T
0
ansistor
0.01 0.1 1 10 100 0.1 1 10 100 500
ESAC I I - COLLECTOR CURRENT (mA) C - COLLEC TOR CURR ENT (mA) V C Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current vs. Collector Current ) (V) V E (
1
E G
1.4
A G A
β
= 10 LT T - 40°C L
1.2
O VO
0.8
N 25 °C V R O E
1
T ER 125 °C IT T
0.6
- 40 °C M IT
0.8
M -E E E S
0.6
A 25 °C SE-
0.4
V = 1.0V CE B A T -A 125 °C - B S
0.4
N) BE (O
0.2
V
0.1 1 10 100 300
BE
0.1 1 10 100
V I I - COLLECTOR CURRENT (mA) C - COLLE CTOR CURRENT ( mA) C Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs. Collector Current vs. Collector Current )
600
A
5
(n F = 1.0MHz T V = 20V N CB E )
4
F C R ibo
100
p R ( U C CE
3
R N O A C obo T T C CI
2
E
10
A L P L O CA
1
C - I CBO
1 0 25 50 75 100 125 150 0.1 0.5 1 5 10 50
T - AMBIENT TE MPERATURE ( C) A ° REVERSE BIAS VOLTAGE (V) Figure 5. Collector Cut-Off Current vs. Figure 6. Output Capacitance vs. Ambient Temperature Reverse Bias Voltage
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