Datasheet SB3H90, SB3H100 (Vishay)

制造商Vishay
描述High Voltage Schottky Plastic Rectifier
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SB3H90, SB3H100. High Voltage Schottky Plastic Rectifier. FEATURES. DO-201AD. TYPICAL APPLICATIONS. PRIMARY CHARACTERISTICS

Datasheet SB3H90, SB3H100 Vishay

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SB3H90, SB3H100
www.vishay.com Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabilitmy • High frequency operation
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
For use in middle voltage high frequency inverters, I freewheeling, DC/DC converters, and polarity protection F(AV) 3.0 A applications. VRRM 90 V, 100 V IFSM 100 A
MECHANICAL DATA
VF 0.65 V
Case:
DO-201AD IR 20 μA Molding compound meets UL 94 V-0 flammability rating TJ max. 175 °C Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD
Terminals:
Matte tin plated leads, solderable per Diode variations Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SB3H90 SB3H100 UNIT
Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum working reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TL = 90 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave I superimposed on rated load FSM 100 A Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Critical rate of rise of reverse voltage dV/dt 10 000 V/μs Storage temperature range TSTG - 55 to + 175 °C Maximum operating junction temperature TJ 175 °C Revision: 13-Aug-13
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Document Number: 88720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000