Datasheet 2N6423 (Inchange Semiconductor) - 2
| 制造商 | Inchange Semiconductor |
| 描述 | Silicon PNP Power Transistor |
| 页数 / 页 | 2 / 2 — isc Silicon PNP Power Transistor. 2N6423. ELECTRICAL CHARACTERISTICS … |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
isc Silicon PNP Power Transistor. 2N6423. ELECTRICAL CHARACTERISTICS TC=25. unless otherwise specified. SYMBOL. PARAMETER
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文件文字版本
isc Silicon PNP Power Transistor 2N6423 ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Col ector-Emitter Breakdown Voltage IC=-50mA -300 V IEBO Emitter -Base Cutoff Current VBE=- 6V -500 uA ICEO Col ector-Emitter Cutoff Current VCB=- 150V -5 mA VCE(sat)-1 Col ector-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1 V VCE(sat)-2 Col ector-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1.8 V hFE-1 DC Current Gain IC=-0.75A; VCE=-2V 10 100 hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 30 150
NOTICE
： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
isc websit e
：
www.iscsemi.com
2
isc & iscsemi is registered trademark
Document Outline isc Silicon PNP Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Col ector-Emitter Breakdown Voltage IC=-50mA -300 V IEBO Emitter -Base Cutoff Current VBE=- 6V -500 uA ICEO Col ector-Emitter Cutoff Current VCB=- 150V -5 mA VCE(sat)-1 Col ector-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1 V VCE(sat)-2 Col ector-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1.8 V hFE-1 DC Current Gain IC=-0.75A; VCE=-2V 10 100 hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 30 150
NOTICE
： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
isc websit e
：
www.iscsemi.com
2
isc & iscsemi is registered trademark
Document Outline isc Silicon PNP Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS