Datasheet 2N6545 (Inchange Semiconductor)
| 制造商 | Inchange Semiconductor |
| 描述 | Silicon NPN Power Transistor |
| 页数 / 页 | 2 / 1 — INCHANGE Semiconductor. isc Product Specification. isc Silicon NPN Power … |
| 文件格式/大小 | PDF / 157 Kb |
| 文件语言 | 英语 |
INCHANGE Semiconductor. isc Product Specification. isc Silicon NPN Power Transistor. 2N6545. DESCRIPTION. APPLICATIONS
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6545 DESCRIPTION
·Excel ent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in inductive circuits where fal time is critical. They are partic- ularly suited for 115 and 220 volt line operated switch-mode applications such as: ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
) SYMBOL PARAMETER VALUE UNIT
VCBO Col ector-Base Voltage 850 V VCEO Col ector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Col ector Current-Continuous 8 A ICM Col ector Current-Peak 16 A PC Col ector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc Silicon NPN Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS
·Excel ent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in inductive circuits where fal time is critical. They are partic- ularly suited for 115 and 220 volt line operated switch-mode applications such as: ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
) SYMBOL PARAMETER VALUE UNIT
VCBO Col ector-Base Voltage 850 V VCEO Col ector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Col ector Current-Continuous 8 A ICM Col ector Current-Peak 16 A PC Col ector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc Silicon NPN Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS