Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier) - 5
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 12 / 5 — Fig 9. Fig 10. Fig 11 |
| 文件格式/大小 | PDF / 292 Kb |
| 文件语言 | 英语 |
Fig 9. Fig 10. Fig 11
该数据表的模型线
文件文字版本
IRF2804/S/L 2.0 300 e I LIMITED BY PACKAGE c D = 75A n at VGS = 10V 250 sise ) R A ( n t 200 1.5 O n e e ) rr cr d u u e C 150 o zi l n S i - a a o r t m - r D n o i , 100 a N( 1.0 r I D D , ) 50 n o ( S D R 0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TC , Case Temperature (°C) TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Fig 10.
Normalized On-Resistance Case Temperature vs. Temperature 1 ) C D = 0.50 J ht 0.1 0.20 Z ( e 0.10 s n o p s 0.05 e R l 0.02 a 0.01 m 0.01 r e h T SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 9.
Maximum Drain Current vs.
Fig 10.
Normalized On-Resistance Case Temperature vs. Temperature 1 ) C D = 0.50 J ht 0.1 0.20 Z ( e 0.10 s n o p s 0.05 e R l 0.02 a 0.01 m 0.01 r e h T SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5