Datasheet 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | N-Channel JFETs |
| 页数 / 页 | 7 / 2 — 2N/SST5484 Series. Vishay Siliconix. Limits. Parameter. Symbol. Test … |
| 文件格式/大小 | PDF / 67 Kb |
| 文件语言 | 英语 |
2N/SST5484 Series. Vishay Siliconix. Limits. Parameter. Symbol. Test Conditions. Typa. Min. Max. Unit. Static. Dynamic. High-Frequency. 7-2
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2N/SST5484 Series Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . –25 V Operating Junction Temperature . –55 to 150_C Gate Current . 10 mA Power Dissipationa . 350 mW Lead Temperature . 300_C Notes Storage Temperature . –65 to 150_C a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static
Gate-Source V Breakdown Voltage (BR)GSS IG = –1 A , VDS = 0 V –35 –25 –25 –25 V Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA –0.3 –3 –0.5 –4 –2 –6 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA VGS = –20 V, VDS = 0 V –0.002 –1 –1 –1 Gate Reverse Current IGSS nA TA = 100_C –0.2 –200 –200 –200 Gate Operating Currentc IG VDG = 10 V, ID = 1 mA –20 pA Gate-Source Forward Voltagec VGS(F) IG = 10 mA , VDS = 0 V 0.8 V
Dynamic
Common-Source 3 6 3.5 7 4 8 mS Forward Transconductanceb gfs VDS = 15 V, V DS = 15 V, GS V = 0 V GS Common-Source f = 1 kHz 50 60 75 S Output Conductanceb gos Common-Source C Input Capacitance iss 2.2 5 5 5 Common-Source V C DS = 15 V, VGS = 0 V 0.7 1 1 1 pF Reverse Transfer Capacitance rss f = 1 MHz Common-Source C Output Capacitance oss 1 2 2 2 Equivalent Input VDS = 15 V, VGS = 0 V nV⁄ 10 Noise Voltagec en f = 100 Hz √Hz
High-Frequency
Common-Source f = 100 MHz 5.5 2.5 Common-Source Y mS Transconductance fs(RE) f = 400 MHz 5.5 3 3.5 f = 100 MHz 45 75 Common-Source VDS = 15 V Y DS os(RE) S Output Conductance VGS = 0 V f = 400 MHz 65 100 100 f = 100 MHz 0.05 0.1 Common-Source Y mS Input Conductance is(RE) f = 400 MHz 0.8 1 1 VDS = 15 V, ID = 1 mA 20 16 25 f = 100 MHz Common-Source Power Gain Gps f = 100 MHz 21 18 30 18 30 VDS = 15 V DS ID = 4 mA f = 400 MHz 13 10 20 10 20 VDS = 15 V, VGS = 0 V 0.3 2.5 2.5 2.5 R dB G = 1 M , f = 1 kHz VDS = 15 V, ID = 1 mA 2 3 Noise Figure NF RG = 1 k , f = 100 MHz VDS = 15 V f = 100 MHz 1 2 2 ID = 4 mA RG = 1 k f = 400 MHz 2.5 4 4 www.vishay.com Document Number: 70246
7-2
S-04028—Rev. E, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . –25 V Operating Junction Temperature . –55 to 150_C Gate Current . 10 mA Power Dissipationa . 350 mW Lead Temperature . 300_C Notes Storage Temperature . –65 to 150_C a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static
Gate-Source V Breakdown Voltage (BR)GSS IG = –1 A , VDS = 0 V –35 –25 –25 –25 V Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA –0.3 –3 –0.5 –4 –2 –6 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA VGS = –20 V, VDS = 0 V –0.002 –1 –1 –1 Gate Reverse Current IGSS nA TA = 100_C –0.2 –200 –200 –200 Gate Operating Currentc IG VDG = 10 V, ID = 1 mA –20 pA Gate-Source Forward Voltagec VGS(F) IG = 10 mA , VDS = 0 V 0.8 V
Dynamic
Common-Source 3 6 3.5 7 4 8 mS Forward Transconductanceb gfs VDS = 15 V, V DS = 15 V, GS V = 0 V GS Common-Source f = 1 kHz 50 60 75 S Output Conductanceb gos Common-Source C Input Capacitance iss 2.2 5 5 5 Common-Source V C DS = 15 V, VGS = 0 V 0.7 1 1 1 pF Reverse Transfer Capacitance rss f = 1 MHz Common-Source C Output Capacitance oss 1 2 2 2 Equivalent Input VDS = 15 V, VGS = 0 V nV⁄ 10 Noise Voltagec en f = 100 Hz √Hz
High-Frequency
Common-Source f = 100 MHz 5.5 2.5 Common-Source Y mS Transconductance fs(RE) f = 400 MHz 5.5 3 3.5 f = 100 MHz 45 75 Common-Source VDS = 15 V Y DS os(RE) S Output Conductance VGS = 0 V f = 400 MHz 65 100 100 f = 100 MHz 0.05 0.1 Common-Source Y mS Input Conductance is(RE) f = 400 MHz 0.8 1 1 VDS = 15 V, ID = 1 mA 20 16 25 f = 100 MHz Common-Source Power Gain Gps f = 100 MHz 21 18 30 18 30 VDS = 15 V DS ID = 4 mA f = 400 MHz 13 10 20 10 20 VDS = 15 V, VGS = 0 V 0.3 2.5 2.5 2.5 R dB G = 1 M , f = 1 kHz VDS = 15 V, ID = 1 mA 2 3 Noise Figure NF RG = 1 k , f = 100 MHz VDS = 15 V f = 100 MHz 1 2 2 ID = 4 mA RG = 1 k f = 400 MHz 2.5 4 4 www.vishay.com Document Number: 70246
7-2
S-04028—Rev. E, 04-Jun-01