Datasheet DLD101 (Diodes) - 2
| 制造商 | Diodes |
| 描述 | Linear Mode Current Sink LED Driver |
| 页数 / 页 | 9 / 2 — DLD101. Thermal Characteristics – Total Device. Characteristic Symbol. … |
| 文件格式/大小 | PDF / 158 Kb |
| 文件语言 | 英语 |
DLD101. Thermal Characteristics – Total Device. Characteristic Symbol. Value. Unit. Electrical Characteristics: (Q1). Min. Typ. Max. Test
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DLD101 Thermal Characteristics – Total Device Characteristic Symbol Value Unit
0.7 (Note 3) Power Dissipation @TA = 25°C PD 0.9 (Note 4) W 1.4 (Note 5) See Figure 1 Thermal Resistance Junction to Ambient @TA = 25°C RθJA (Notes 3, 4, & 5) °C/W See Figure 2 Thermal Resistance Junction to Case @TA = 25°C Rθ ° JC C/W (Notes 3, 4, & 5) T Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6). UC 4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated. 5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.
Electrical Characteristics: (Q1)
@TA = 25°C unless otherwise specified NEW PROD
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 100 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 2.0 ⎯ 4.1 V VDS = VGS, ID = 250μA ⎯ 0.85 V Static Drain-Source On-Resistance R GS = 10V, ID = 1.5A DS (ON) ⎯ ⎯ Ω 0.99 VGS = 6V, ID = 1A Forward Transconductance gfs ⎯ 0.9 ⎯ S VDS = 15V, ID = 1A Diode Forward Voltage VSD ⎯ 0.89 1.1 V VGS = 0V, IS = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 129 ⎯ pF VDS = 50V, VGS = 0V Output Capacitance Coss ⎯ 14 ⎯ pF f = 1.0MHz Reverse Transfer Capacitance Crss ⎯ 8 ⎯ pF
SWITCHING CHARACTERISTICS
Total Gate Charge Qg ⎯ 3.4 ⎯ Gate-Source Charge Qgs ⎯ 0.9 ⎯ nC VDS = 50V, VGS = 10V, ID = 1A Gate-Drain Charge Qgd ⎯ 1 ⎯ Turn-On Delay Time td(on) ⎯ 7.9 ⎯ Rise Time tr ⎯ 11.4 ⎯ V ns GS = 50V, VDS = 10V, Turn-Off Delay Time td(off) ⎯ 14.3 ⎯ ID = 1A, RG ≈ 6Ω Fall Time tf ⎯ 9.6 ⎯
Electrical Characteristics: (Q2)
@TA = 25°C unless otherwise specified
Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition
V Input Voltage I(off) 0.4 - - V VCC = 5V, IO = 100μA VI(on) - - 1.5 V VCC = 0.3V, IO = 5mA Output Voltage VO(on) - 0.05 0.3 V IO/II = 5mA/0.25mA Output Current IO(off) - - 0.5 μA VCC = 50V, VI = 0V DC Current Gain G1 80 - - - VO = 5V, IO = 10mA Input Resistance R1 3.2 4.7 6.2 kΩ - Resistance Ratio R2/R1 8 10 12 - - V Transition Frequency f CE = 10V, IE = 5mA, T - 260 - MHz f = 100MHz Notes: 6. Short duration pulse test used to minimize self-heating effect. DLD101 2 of 9 April 2010 Document number: DS32007 Rev. 8 - 2
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© Diodes Incorporated
0.7 (Note 3) Power Dissipation @TA = 25°C PD 0.9 (Note 4) W 1.4 (Note 5) See Figure 1 Thermal Resistance Junction to Ambient @TA = 25°C RθJA (Notes 3, 4, & 5) °C/W See Figure 2 Thermal Resistance Junction to Case @TA = 25°C Rθ ° JC C/W (Notes 3, 4, & 5) T Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6). UC 4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated. 5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.
Electrical Characteristics: (Q1)
@TA = 25°C unless otherwise specified NEW PROD
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 100 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 2.0 ⎯ 4.1 V VDS = VGS, ID = 250μA ⎯ 0.85 V Static Drain-Source On-Resistance R GS = 10V, ID = 1.5A DS (ON) ⎯ ⎯ Ω 0.99 VGS = 6V, ID = 1A Forward Transconductance gfs ⎯ 0.9 ⎯ S VDS = 15V, ID = 1A Diode Forward Voltage VSD ⎯ 0.89 1.1 V VGS = 0V, IS = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 129 ⎯ pF VDS = 50V, VGS = 0V Output Capacitance Coss ⎯ 14 ⎯ pF f = 1.0MHz Reverse Transfer Capacitance Crss ⎯ 8 ⎯ pF
SWITCHING CHARACTERISTICS
Total Gate Charge Qg ⎯ 3.4 ⎯ Gate-Source Charge Qgs ⎯ 0.9 ⎯ nC VDS = 50V, VGS = 10V, ID = 1A Gate-Drain Charge Qgd ⎯ 1 ⎯ Turn-On Delay Time td(on) ⎯ 7.9 ⎯ Rise Time tr ⎯ 11.4 ⎯ V ns GS = 50V, VDS = 10V, Turn-Off Delay Time td(off) ⎯ 14.3 ⎯ ID = 1A, RG ≈ 6Ω Fall Time tf ⎯ 9.6 ⎯
Electrical Characteristics: (Q2)
@TA = 25°C unless otherwise specified
Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition
V Input Voltage I(off) 0.4 - - V VCC = 5V, IO = 100μA VI(on) - - 1.5 V VCC = 0.3V, IO = 5mA Output Voltage VO(on) - 0.05 0.3 V IO/II = 5mA/0.25mA Output Current IO(off) - - 0.5 μA VCC = 50V, VI = 0V DC Current Gain G1 80 - - - VO = 5V, IO = 10mA Input Resistance R1 3.2 4.7 6.2 kΩ - Resistance Ratio R2/R1 8 10 12 - - V Transition Frequency f CE = 10V, IE = 5mA, T - 260 - MHz f = 100MHz Notes: 6. Short duration pulse test used to minimize self-heating effect. DLD101 2 of 9 April 2010 Document number: DS32007 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated