Datasheet FGD4536 (ON Semiconductor) - 2

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features General Description
• High Current Capability • Low Saturation Voltage: V Using novel trench IGBT technology, CE(sat) = 1.59 V @ IC = 50 A ON Semiconductor’s new • High Input Impedance series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low • Fast Switching conduction and switching losses are essential. • RoHS Compliant
Applications
• PDP TV, Consumer Appliances
C G TO-252/D-PAK E Absolute Maximum Ratings Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 360 V VGES Gate to Emitter Voltage  30 V I Pulsed Collector Current @ T C pulse(1)* C = 25oC 220 A Maximum Power Dissipation @ T P C = 25oC 125 W D Maximum Power Dissipation @ TC = 100oC 50 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC Maximum Lead Temp. for soldering TL Purposes, 1/8” from case for 5 seconds 300 oC
Thermal Characteristics Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction to Case - 1.0 oC/W RJA Thermal Resistance, Junction to Ambient - 62.5 oC/W
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec * Ic_pluse limited by max Tj ©2011 Semiconductor Components Industries, LLC.
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Publication Order Number: October-2017, Rev. 3 FGD4536/D Document Outline FGD4536 360 V PDP Trench IGBT 360 V ± 30 V 220 A 125 W 50 W -55 to +150 oC -55 to +150 oC - 1.0 oC/W - 62.5 oC/W FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - - - V - 100 mA - ±400 nA 3.3 4.0 V 1.19 - V 1295 - pF 56 - pF 43 - pF 5 - ns 20 - ns 41 - ns 182 - ns 5 - ns 21 - ns 43 - ns 249 - ns 47 - nC 5.4 - nC 15 - nC