Datasheet FGD4536 (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | 360 V PDP Trench IGBT |
| 页数 / 页 | 9 / 5 — FGD4536. Typical Performance Characteristics. Figure 7. Saturation … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
FGD4536. Typical Performance Characteristics. Figure 7. Saturation Voltage vs. Case. Figure 8. Capacitance Characteristics
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FGD4536 Typical Performance Characteristics Figure 7. Saturation Voltage vs. Case Figure 8. Capacitance Characteristics Temperature at Variant Current Level — 360 V PDP Trench IGBT Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics Fgure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs. Gate Resistance Gate Resistance www.onsemi.com 4
Document Outline FGD4536 360 V PDP Trench IGBT 360 V ± 30 V 220 A 125 W 50 W -55 to +150 oC -55 to +150 oC - 1.0 oC/W - 62.5 oC/W FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - - - V - 100 mA - ±400 nA 3.3 4.0 V 1.19 - V 1295 - pF 56 - pF 43 - pF 5 - ns 20 - ns 41 - ns 182 - ns 5 - ns 21 - ns 43 - ns 249 - ns 47 - nC 5.4 - nC 15 - nC
Document Outline FGD4536 360 V PDP Trench IGBT 360 V ± 30 V 220 A 125 W 50 W -55 to +150 oC -55 to +150 oC - 1.0 oC/W - 62.5 oC/W FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - - - V - 100 mA - ±400 nA 3.3 4.0 V 1.19 - V 1295 - pF 56 - pF 43 - pF 5 - ns 20 - ns 41 - ns 182 - ns 5 - ns 21 - ns 43 - ns 249 - ns 47 - nC 5.4 - nC 15 - nC