Datasheet ZVN3306A (Diodes) - 3
| 制造商 | Diodes |
| 描述 | N-Channel Enhancement Mode Vertical DMOS FET |
| 页数 / 页 | 3 / 3 — ZVN3306A. TYPICAL CHARACTERISTICS. Transconductance v gate-source … |
| 文件格式/大小 | PDF / 53 Kb |
| 文件语言 | 英语 |
ZVN3306A. TYPICAL CHARACTERISTICS. Transconductance v gate-source voltage. Capacitance v drain-source voltage
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ZVN3306A TYPICAL CHARACTERISTICS
200 50 180 160 40 140 nce (mS) 120 30 VDS=18V Ciss ucta 100 nd 80 20 o 60 sc an 40 10 r C-Capacitance (pF) T Coss - 20 fs Crss g 0 0 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage Capacitance v drain-source voltage
VDD=20V 30V 50V 16 olts) 14 ID=800mA 12 10 oltage (V 8 6 4 2 -Gate Source V S G 0 V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC)
Gate charge v gate-source voltage
3-377
200 50 180 160 40 140 nce (mS) 120 30 VDS=18V Ciss ucta 100 nd 80 20 o 60 sc an 40 10 r C-Capacitance (pF) T Coss - 20 fs Crss g 0 0 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage Capacitance v drain-source voltage
VDD=20V 30V 50V 16 olts) 14 ID=800mA 12 10 oltage (V 8 6 4 2 -Gate Source V S G 0 V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC)
Gate charge v gate-source voltage
3-377