Datasheet JCS10N60T (JiLin Sino-Microelectronics) - 6
| 制造商 | JiLin Sino-Microelectronics |
| 描述 | N-Channel MOSFET |
| 页数 / 页 | 10 / 6 — ELECTRICAL CHARACTERISTICS (curves). Breakdown Voltage Variation. … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS (curves). Breakdown Voltage Variation. On-Resistance Variation. vs. Temperature
该数据表的模型线
文件文字版本
R
JCS10N60T 特征曲线
ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature
1.2 4.0 3.5 ) 1.1 3.0 lized a d) m 2.5 or lize a (N 1.0 orm 2.0 DS BV (N n ) 1.5 (oD R 0.9 Notes: 1.0 Notes: 1. V =0V GS 1. V =10V 2. I =250μA 0.5 GS D 2. I =4.75A D 0.8 0.0 -75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T [℃] j T [℃] j
Maximum Safe Operating Area Maximum Safe Operating Area For JCS10N60CT For JCS10N60FT
Operation in This Area Operation in This Area is Limited by R is Limited by R DS(ON) DS(ON) 102 102 10μs 10μs 100μs 101 100μs 101 1ms 1ms 10ms Drain Current [A] 10ms Drain Current [A] I D 100 100ms I D 100 Note: Note: 100ms 1 T =25 ℃ 1 T =25 ℃ C DC C DC 2 T =150 ℃ 2 T =150 ℃ J J 3 Single Pulse 10-1 3 Single Pulse 10-1 100 101 102 103 100 101 102 103 V Drain-Source Voltage [V] V Drain-Source Voltage [V] DS DS
Maximum Drain Current vs. Case Temperature 10 8
] t [A n
6
rre Cu n ai
4
Dr I D
2 025 50 75 100 125 150
T Case Temperature [℃] C 版本：201112D 6/10
JCS10N60T 特征曲线
ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature
1.2 4.0 3.5 ) 1.1 3.0 lized a d) m 2.5 or lize a (N 1.0 orm 2.0 DS BV (N n ) 1.5 (oD R 0.9 Notes: 1.0 Notes: 1. V =0V GS 1. V =10V 2. I =250μA 0.5 GS D 2. I =4.75A D 0.8 0.0 -75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T [℃] j T [℃] j
Maximum Safe Operating Area Maximum Safe Operating Area For JCS10N60CT For JCS10N60FT
Operation in This Area Operation in This Area is Limited by R is Limited by R DS(ON) DS(ON) 102 102 10μs 10μs 100μs 101 100μs 101 1ms 1ms 10ms Drain Current [A] 10ms Drain Current [A] I D 100 100ms I D 100 Note: Note: 100ms 1 T =25 ℃ 1 T =25 ℃ C DC C DC 2 T =150 ℃ 2 T =150 ℃ J J 3 Single Pulse 10-1 3 Single Pulse 10-1 100 101 102 103 100 101 102 103 V Drain-Source Voltage [V] V Drain-Source Voltage [V] DS DS
Maximum Drain Current vs. Case Temperature 10 8
] t [A n
6
rre Cu n ai
4
Dr I D
2 025 50 75 100 125 150
T Case Temperature [℃] C 版本：201112D 6/10