Datasheet P2503NPG (Niko Semiconductor)
| 制造商 | Niko Semiconductor |
| 描述 | N- & P-Channel Enhancement Mode Field Effect Transistor |
| 页数 / 页 | 7 / 1 — P2503NPG. NIKO-SEM. N- & P-Channel Enhancement Mode. DIP-8. Field … |
| 文件格式/大小 | PDF / 488 Kb |
| 文件语言 | 英语 |
P2503NPG. NIKO-SEM. N- & P-Channel Enhancement Mode. DIP-8. Field Effect Transistor. Halogen-Free & Lead-Free
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文件文字版本
P2503NPG NIKO-SEM N- & P-Channel Enhancement Mode DIP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY
D1 D1 D2 D2 V(BR)DSS RDS(ON) ID G : GATE N-Channel 30 25mΩ 7A D : DRAIN P-Channel -30 S : SOURCE 45mΩ -5A #1S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25
°
C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V TC = 25 °C 7 -5 Continuous Drain Current ID TC = 70 °C 6 -4 A Pulsed Drain Current1 IDM 20 -20 Avalanche Current IAS 18 -18 Avalanche Energy L = 0.1mH EAS 19 mJ TC = 25 °C 2.5 Power Dissipation PD W TC = 70 °C 1.6 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RθJA 50 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TJ = 25
°
C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC
VGS = 0V, ID = 250µA N-Ch 30 Drain-Source Breakdown Voltage V(BR)DSS P-Ch -30 VGS = 0V, ID = -250µA V VDS = VGS, ID = 250µA N-Ch 1 1.5 2.5 Gate Threshold Voltage VGS(th) P-Ch -1 -1.5 -2.5 VDS = VGS, ID = -250µA
REV 1.2
1 Feb-09-2010
D1 D1 D2 D2 V(BR)DSS RDS(ON) ID G : GATE N-Channel 30 25mΩ 7A D : DRAIN P-Channel -30 S : SOURCE 45mΩ -5A #1S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25
°
C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V TC = 25 °C 7 -5 Continuous Drain Current ID TC = 70 °C 6 -4 A Pulsed Drain Current1 IDM 20 -20 Avalanche Current IAS 18 -18 Avalanche Energy L = 0.1mH EAS 19 mJ TC = 25 °C 2.5 Power Dissipation PD W TC = 70 °C 1.6 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RθJA 50 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TJ = 25
°
C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC
VGS = 0V, ID = 250µA N-Ch 30 Drain-Source Breakdown Voltage V(BR)DSS P-Ch -30 VGS = 0V, ID = -250µA V VDS = VGS, ID = 250µA N-Ch 1 1.5 2.5 Gate Threshold Voltage VGS(th) P-Ch -1 -1.5 -2.5 VDS = VGS, ID = -250µA
REV 1.2
1 Feb-09-2010