Datasheet BC639 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | High Current NPN Bipolar Transistor |
| 页数 / 页 | 5 / 3 — BC637, BC639, BC639−16. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 文件格式/大小 | PDF / 155 Kb |
| 文件语言 | 英语 |
BC637, BC639, BC639−16. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) BC637 60 − − BC639 80 − − Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) V(BR)CES Vdc (IC = 100 mAdc, IB = 0) BC639−16 120 − − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) BC637 60 − − BC639 80 − − Emitter − Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO (VCB = 30 Vdc, IE = 0) − − 100 nAdc (VCB = 30 Vdc, IE = 0, TA = 125°C) − − 10 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 − − (IC = 150 mAdc, VCE = 2.0 Vdc) BC637 40 − 160 BC639 40 − 160 BC639−16ZLT1 100 − 250 (IC = 500 mA, VCE = 2.0 V) 25 − − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) − − 0.5 Base − Emitter On Voltage VBE(on) Vdc (IC = 500 mAdc, VCE = 2.0 Vdc) − − 1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) − 200 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 7.0 − Input Capacitance Cib pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 50 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION Device Package Shipping
† BC637G TO−92 5000 Units / Bulk (Pb−Free) BC637RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639G TO−92 5000 Units / Bulk (Pb−Free) BC639RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639ZL1G TO−92 2000 / Ammo Box (Pb−Free) BC639−16ZL1G TO−92 2000 / Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) BC637 60 − − BC639 80 − − Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) V(BR)CES Vdc (IC = 100 mAdc, IB = 0) BC639−16 120 − − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) BC637 60 − − BC639 80 − − Emitter − Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO (VCB = 30 Vdc, IE = 0) − − 100 nAdc (VCB = 30 Vdc, IE = 0, TA = 125°C) − − 10 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 − − (IC = 150 mAdc, VCE = 2.0 Vdc) BC637 40 − 160 BC639 40 − 160 BC639−16ZLT1 100 − 250 (IC = 500 mA, VCE = 2.0 V) 25 − − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) − − 0.5 Base − Emitter On Voltage VBE(on) Vdc (IC = 500 mAdc, VCE = 2.0 Vdc) − − 1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) − 200 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 7.0 − Input Capacitance Cib pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 50 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION Device Package Shipping
† BC637G TO−92 5000 Units / Bulk (Pb−Free) BC637RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639G TO−92 5000 Units / Bulk (Pb−Free) BC639RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639ZL1G TO−92 2000 / Ammo Box (Pb−Free) BC639−16ZL1G TO−92 2000 / Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2