Datasheet BD237 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | 2.0 A, 80 V, 25W NPN Bipolar Power Transistor |
| 页数 / 页 | 6 / 2 — BD237G (NPN), BD234G (PNP). ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 文件格式/大小 | PDF / 172 Kb |
| 文件语言 | 英语 |
BD237G (NPN), BD234G (PNP). ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit
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BD237G (NPN), BD234G (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1) V(BR)CEO Vdc (IC = 0.1 Adc, IB = 0) BD237G, BD238G 80 − BD234G 45 − Collector Cutoff Current ICBO mAdc (VCB = 100 Vdc, IE = 0) BD237G, BD238G − 0.1 (VCB = 60 Vdc, IE = 0) BD234G − 0.1 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 1.0 DC Current Gain − (IC = 0.15 A, VCE = 2.0 V) hFE1 40 − (IC = 1.0 A, VCE = 2.0 V) hFE2 25 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 0.6 Base−Emitter On Voltage (Note 1) VBE(on) Vdc (IC = 1.0 Adc, VCE = 2.0 Vdc) − 1.3 Current−Gain − Bandwidth Product fT MHz (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 10 The Safe Operating Area Curves indicate IC−VCE limits 100 ms below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the 3 1 ms (AMP) applicable Safe Area to avoid causing a catastrophic failure. 5 ms To insure operation below the maximum TJ, TJ = 150°C dc power−temperature derating must be observed for both 1 steady state and pulse power conditions. OR CURRENT 0.3 , COLLECT I C BD236 0.1 BD237 1 3 10 30 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area www.onsemi.com 2
BD237G (NPN), BD234G (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1) V(BR)CEO Vdc (IC = 0.1 Adc, IB = 0) BD237G, BD238G 80 − BD234G 45 − Collector Cutoff Current ICBO mAdc (VCB = 100 Vdc, IE = 0) BD237G, BD238G − 0.1 (VCB = 60 Vdc, IE = 0) BD234G − 0.1 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 1.0 DC Current Gain − (IC = 0.15 A, VCE = 2.0 V) hFE1 40 − (IC = 1.0 A, VCE = 2.0 V) hFE2 25 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 0.6 Base−Emitter On Voltage (Note 1) VBE(on) Vdc (IC = 1.0 Adc, VCE = 2.0 Vdc) − 1.3 Current−Gain − Bandwidth Product fT MHz (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 10 The Safe Operating Area Curves indicate IC−VCE limits 100 ms below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the 3 1 ms (AMP) applicable Safe Area to avoid causing a catastrophic failure. 5 ms To insure operation below the maximum TJ, TJ = 150°C dc power−temperature derating must be observed for both 1 steady state and pulse power conditions. OR CURRENT 0.3 , COLLECT I C BD236 0.1 BD237 1 3 10 30 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area www.onsemi.com 2