Ordering number : ENA2321A CPH3362 Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel http://onsemi.com Features On-resistance RDS(on)1=1.3Ω (typ) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Symbol Conditions Value VDSS Unit 100 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 0.7 A Drain Current (Pulse) IDP PW10s, duty cycle1% Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg 2.8 A 1 W 150 C 55 to +150 C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) RJA Value 125 Unit C/W Electrical Characteristics at Ta 25C Value Parameter Symbol Conditions Unit min typ max 100 Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=0.3A 1.0 RDS(on)1 ID=0.7A, VGS=10V 1.3 1.7 RDS(on)2 ID=0.3A, VGS=4.5V 1.4 1.96 RDS(on)3 ID=0.3A, VGS=4V 1.45 2.1 Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss V 1.2 142 VDS=20V, f=1MHz -1 A 10 A 2.6 V S pF 12 pF 7.3 pF Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 72314HK TC-00003137/40914TKIM PE No.A2321-1/5