Datasheet LM4040 (Diodes) - 2
| 制造商 | Diodes |
| 描述 | PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE |
| 页数 / 页 | 16 / 2 — LM4040. Absolute Maximum Ratings. Parameter. Rating. Unit. Package … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
LM4040. Absolute Maximum Ratings. Parameter. Rating. Unit. Package Thermal Data. Package. DIS. TA = +25°C, TJ = +125°C
该数据表的模型线
- LM4040B25FTA LM4040B25QFTA LM4040B30FTA LM4040B30QFTA LM4040B33FTA LM4040B33QFTA LM4040B41FTA LM4040B41QFTA LM4040B50FTA LM4040C25FTA LM4040C25QFTA LM4040C30FTA LM4040C33FTA LM4040C33QFTA LM4040C41FTA LM4040C41QFTA LM4040C50FTA LM4040D25FTA LM4040D25QFTA LM4040D30FTA LM4040D30QFTA LM4040D33FTA LM4040D33QFTA LM4040D41FTA LM4040D41QFTA LM4040D50FTA LM4040D50QFTA
文件文字版本
LM4040 Absolute Maximum Ratings
(Voltages to Anode Unless Otherwise Stated)
Parameter Rating Unit
Continuous Reverse Current 20 mA Continuous Forward Current 10 mA Operating Junction Temperature -40 to +150 °C Storage Temperature -55 to +150 °C Caution: Stresses greater than the Absolute Maximum Ratings specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. (Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.) Unless otherwise stated voltages specified are relative to the Anode pin.
Package Thermal Data P Package θ DIS JA TA = +25°C, TJ = +125°C
SOT23 380°C/W 330mW
Recommended Operating Conditions Parameter Min Max Unit
Reverse Current 0.06 15 mA Operating Ambient Temperature Range -40 +125 °C
Electrical Characteristics
(Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-25 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 2.5 — — — V V +25°C ±5 ±12 ±25 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±21 ±29 ±49 mV -40 to +125°C ±30 ±38 ±63 +25°C 45 60 60 65 IRMIN Minimum Operating Current — -40 to +85°C µA — 65 65 70 -40 to +125°C 68 68 73 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.3 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.0 1.0 1.2 -40 to +125°C 1.0 1.0 1.2 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.5 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 8.0 8.0 10.0 -40 to +125°C 8.0 8.0 10.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.3 0.8 0.9 1.1 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 2 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
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© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations
(Voltages to Anode Unless Otherwise Stated)
Parameter Rating Unit
Continuous Reverse Current 20 mA Continuous Forward Current 10 mA Operating Junction Temperature -40 to +150 °C Storage Temperature -55 to +150 °C Caution: Stresses greater than the Absolute Maximum Ratings specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. (Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.) Unless otherwise stated voltages specified are relative to the Anode pin.
Package Thermal Data P Package θ DIS JA TA = +25°C, TJ = +125°C
SOT23 380°C/W 330mW
Recommended Operating Conditions Parameter Min Max Unit
Reverse Current 0.06 15 mA Operating Ambient Temperature Range -40 +125 °C
Electrical Characteristics
(Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-25 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 2.5 — — — V V +25°C ±5 ±12 ±25 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±21 ±29 ±49 mV -40 to +125°C ±30 ±38 ±63 +25°C 45 60 60 65 IRMIN Minimum Operating Current — -40 to +85°C µA — 65 65 70 -40 to +125°C 68 68 73 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.3 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.0 1.0 1.2 -40 to +125°C 1.0 1.0 1.2 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.5 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 8.0 8.0 10.0 -40 to +125°C 8.0 8.0 10.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.3 0.8 0.9 1.1 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 2 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations