Datasheet TLV431ASNT1G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Low Voltage Precision Adjustable Shunt Regulator |
| 页数 / 页 | 19 / 2 — TLV431, NCV431, SCV431. Device Symbol. Figure 2. Representative Device … |
| 文件格式/大小 | PDF / 402 Kb |
| 文件语言 | 英语 |
TLV431, NCV431, SCV431. Device Symbol. Figure 2. Representative Device Symbol and Schematic Diagram. MAXIMUM RATINGS. Rating
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文件文字版本
TLV431, NCV431, SCV431
Cathode (K) Cathode (K) Reference (R) Reference (R) Anode (A)
Device Symbol
Anode (A) The device contains 13 active transistors.
Figure 2. Representative Device Symbol and Schematic Diagram MAXIMUM RATINGS
(Full operating ambient temperature range applies, unless otherwise noted)
Rating Symbol Value Unit
Cathode to Anode Voltage VKA 18 V Cathode Current Range, Continuous IK −20 to 25 mA Reference Input Current Range, Continuous Iref *0.05 to 10 mA Thermal Characteristics °C/W LP Suffix Package, TO−92−3 Package Thermal Resistance, Junction−to−Ambient RqJA 178 Thermal Resistance, Junction−to−Case RqJC 83 SN Suffix Package, TSOP−5 Package Thermal Resistance, Junction−to−Ambient RqJA 226 SN1 Suffix Package, SOT−23−3 Package Thermal Resistance, Junction−to−Ambient RqJA 491 Operating Junction Temperature TJ 150 °C Operating Ambient Temperature Range TLV431 TA *40 to 85 °C NCV431, SCV431 *40 to 125 Storage Temperature Range Tstg *65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per JEDEC JESD22−A114F, Machine Model Method 200 V per JEDEC JESD22−A115C, Charged Device Method 1000 V per JEDEC JESD22−C101E. This device contains latch−up protection and exceeds ±100 mA per JEDEC standard JESD78. TJ(max) * TA PD + RqJA
RECOMMENDED OPERATING CONDITIONS Condition Symbol Min Max Unit
Cathode to Anode Voltage VKA Vref 16 V Cathode Current IK 0.1 20 mA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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Cathode (K) Cathode (K) Reference (R) Reference (R) Anode (A)
Device Symbol
Anode (A) The device contains 13 active transistors.
Figure 2. Representative Device Symbol and Schematic Diagram MAXIMUM RATINGS
(Full operating ambient temperature range applies, unless otherwise noted)
Rating Symbol Value Unit
Cathode to Anode Voltage VKA 18 V Cathode Current Range, Continuous IK −20 to 25 mA Reference Input Current Range, Continuous Iref *0.05 to 10 mA Thermal Characteristics °C/W LP Suffix Package, TO−92−3 Package Thermal Resistance, Junction−to−Ambient RqJA 178 Thermal Resistance, Junction−to−Case RqJC 83 SN Suffix Package, TSOP−5 Package Thermal Resistance, Junction−to−Ambient RqJA 226 SN1 Suffix Package, SOT−23−3 Package Thermal Resistance, Junction−to−Ambient RqJA 491 Operating Junction Temperature TJ 150 °C Operating Ambient Temperature Range TLV431 TA *40 to 85 °C NCV431, SCV431 *40 to 125 Storage Temperature Range Tstg *65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per JEDEC JESD22−A114F, Machine Model Method 200 V per JEDEC JESD22−A115C, Charged Device Method 1000 V per JEDEC JESD22−C101E. This device contains latch−up protection and exceeds ±100 mA per JEDEC standard JESD78. TJ(max) * TA PD + RqJA
RECOMMENDED OPERATING CONDITIONS Condition Symbol Min Max Unit
Cathode to Anode Voltage VKA Vref 16 V Cathode Current IK 0.1 20 mA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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