Datasheet LM285, LM385B (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Micropower Voltage Reference Diodes |
| 页数 / 页 | 10 / 2 — LM285, LM385B. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. ELECTRICAL … |
| 文件格式/大小 | PDF / 207 Kb |
| 文件语言 | 英语 |
LM285, LM385B. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. ELECTRICAL CHARACTERISTICS. LM285−1.2. LM385−1.2. LM385B−1.2. Characteristic
该数据表的模型线
- LM285D-1.2G LM285D-1.2R2G LM285D-2.5G LM285D-2.5R2G LM285D−1.2 LM285D−1.2G LM285D−1.2R2 LM285D−1.2R2G LM285D−2.5 LM285D−2.5G LM285D−2.5R2 LM285D−2.5R2G LM285Z−1.2 LM285Z−1.2G LM285Z−1.2RA LM285Z−1.2RAG LM285Z−2.5 LM285Z−2.5G LM285Z−2.5RA LM285Z−2.5RAG LM285Z−2.5RP LM285Z−2.5RPG
文件文字版本
link to page 2 link to page 2
LM285, LM385B MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted)
Rating Symbol Value Unit
Reverse Current IR 30 mA Forward Current IF 10 mA Operating Ambient Temperature Range TA °C LM285 −40 to +85 LM385 0 to +70 Operating Junction Temperature TJ +150 °C Storage Temperature Range Tstg −65 to + 150 °C Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 4000 Machine Model (MM) 400 Charged Device Model (CDM) 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
LM285−1.2 LM385−1.2
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LM385B−1.2 Characteristic Symbol Min Typ Max Min Typ Max Unit
Reverse Breakdown Voltage (IRmin v IR v 20 mA) V(BR)R V LM285−1.2/LM385B−1.2 1.223 1.235 1.247 1.223 1.235 1.247 TA = Tlow to Thigh (Note 1) 1.200 − 1.270 1.210 − 1.260 LM385−1.2 − − − 1.205 1.235 1.260 TA = Tlow to Thigh (Note 1) − − − 1.192 − 1.273 Minimum Operating Current IRmin mA TA = 25°C − 8.0 10 8.0 15 TA = Tlow to Thigh (Note 1) − − 20 − − 20 Reverse Breakdown Voltage Change with Current DV(BR)R mV IRmin v IR v 1.0 mA, TA = +25°C − − 1.0 − − 1.0 TA = Tlow to Thigh (Note 1) − − 1.5 − − 1.5 1.0 mA v IR v 20 mA, TA = +25°C − − 10 − − 20 TA = Tlow to Thigh (Note 1) − − 20 − − 25 Reverse Dynamic Impedance Z W IR = 100 mA, TA = +25°C − 0.6 − − 0.6 − Average Temperature Coefficient DV(BR)/DT ppm/°C 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) − 80 − − 80 − Wideband Noise (RMS) n mV IR = 100 mA, 10 Hz v f v 10 kHz − 60 − − 60 − Long Term Stability S ppm/kHR IR = 100 mA, TA = +25°C ± 0.1°C − 20 − − 20 − Reverse Breakdown Voltage (IRmin v IR v 20 mA) V(BR)R V LM285−2.5/LM385B−2.5 2.462 2.5 2.538 2.462 2.5 2.538 TA = Tlow to Thigh (Note 1) 2.415 − 2.585 2.436 − 2.564 LM385−2.5 − − − 2.425 2.5 2.575 TA = Tlow to Thigh (Note 1) − − − 2.400 − 2.600 Minimum Operating Current IRmin mA TA = 25°C − 13 20 − 13 20 TA = Tlow to Thigh (Note 1) − − 30 − − 30 1. Tlow = −40°C for LM285−1.2, LM285−2.5 Thigh = +85°C for LM285−1.2, LM285−2.5 Tlow = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 Thigh = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
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LM285, LM385B MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted)
Rating Symbol Value Unit
Reverse Current IR 30 mA Forward Current IF 10 mA Operating Ambient Temperature Range TA °C LM285 −40 to +85 LM385 0 to +70 Operating Junction Temperature TJ +150 °C Storage Temperature Range Tstg −65 to + 150 °C Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 4000 Machine Model (MM) 400 Charged Device Model (CDM) 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
LM285−1.2 LM385−1.2
/
LM385B−1.2 Characteristic Symbol Min Typ Max Min Typ Max Unit
Reverse Breakdown Voltage (IRmin v IR v 20 mA) V(BR)R V LM285−1.2/LM385B−1.2 1.223 1.235 1.247 1.223 1.235 1.247 TA = Tlow to Thigh (Note 1) 1.200 − 1.270 1.210 − 1.260 LM385−1.2 − − − 1.205 1.235 1.260 TA = Tlow to Thigh (Note 1) − − − 1.192 − 1.273 Minimum Operating Current IRmin mA TA = 25°C − 8.0 10 8.0 15 TA = Tlow to Thigh (Note 1) − − 20 − − 20 Reverse Breakdown Voltage Change with Current DV(BR)R mV IRmin v IR v 1.0 mA, TA = +25°C − − 1.0 − − 1.0 TA = Tlow to Thigh (Note 1) − − 1.5 − − 1.5 1.0 mA v IR v 20 mA, TA = +25°C − − 10 − − 20 TA = Tlow to Thigh (Note 1) − − 20 − − 25 Reverse Dynamic Impedance Z W IR = 100 mA, TA = +25°C − 0.6 − − 0.6 − Average Temperature Coefficient DV(BR)/DT ppm/°C 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) − 80 − − 80 − Wideband Noise (RMS) n mV IR = 100 mA, 10 Hz v f v 10 kHz − 60 − − 60 − Long Term Stability S ppm/kHR IR = 100 mA, TA = +25°C ± 0.1°C − 20 − − 20 − Reverse Breakdown Voltage (IRmin v IR v 20 mA) V(BR)R V LM285−2.5/LM385B−2.5 2.462 2.5 2.538 2.462 2.5 2.538 TA = Tlow to Thigh (Note 1) 2.415 − 2.585 2.436 − 2.564 LM385−2.5 − − − 2.425 2.5 2.575 TA = Tlow to Thigh (Note 1) − − − 2.400 − 2.600 Minimum Operating Current IRmin mA TA = 25°C − 13 20 − 13 20 TA = Tlow to Thigh (Note 1) − − 30 − − 30 1. Tlow = −40°C for LM285−1.2, LM285−2.5 Thigh = +85°C for LM285−1.2, LM285−2.5 Tlow = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 Thigh = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
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