Datasheet ZXRE330 (Diodes) - 3
| 制造商 | Diodes |
| 描述 | Precision Micropower Shunt Voltage References |
| 页数 / 页 | 9 / 3 — ZXRE330. Electrical Characteristics. Conditions. Symbol. Parameter. Typ. … |
| 文件格式/大小 | PDF / 828 Kb |
| 文件语言 | 英语 |
ZXRE330. Electrical Characteristics. Conditions. Symbol. Parameter. Typ. E Limits. Units. TAMB. www.diodes.com
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ZXRE330 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Conditions Symbol Parameter Typ E Limits Units
—
TAMB
Reverse Breakdown Voltage IR = 100μA +25°C 3.3 — V ZXRE330A ±16.5 VREF +25°C Reverse Breakdown Voltage Tolerance IR = 100μA ZXRE330E — ±66 mV -40 to +85°C ±99 +25°C 0.5 — IROFF Off-State Reverse Current V = VREF x 0.9 µA -40 to +85°C — 1 IR = 5mA ±20 — — ΔV Average Reverse Breakdown Voltage R/ΔT IR = 100µA -40 to +85°C ±15 ±150 ppm/°C Temperature Coefficient IR = 10µA ±15 — — +25°C 0.2 — 2µA < IR < 100µA -40 to +85°C — 0.6 ΔVR Reverse Breakdown Change with Current mV 25°C 10 — 100µA < IR < 5mA -40 to +85°C — 20 IRMIN Minimal Operating Current — 1 2 µA ZR Dynamic Output Impedance IR = 2mA, f = 120Hz, IAC = 0.1IR 2 — Ω I e R = 100µ A n Noise Voltage 55 — µV 10Hz < f < 10kHz RMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +85°C 0.08 — % ZXRE330 3 of 9 September 2023 Document number: DS36772 Rev 4 - 2
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.)
Conditions Symbol Parameter Typ E Limits Units
—
TAMB
Reverse Breakdown Voltage IR = 100μA +25°C 3.3 — V ZXRE330A ±16.5 VREF +25°C Reverse Breakdown Voltage Tolerance IR = 100μA ZXRE330E — ±66 mV -40 to +85°C ±99 +25°C 0.5 — IROFF Off-State Reverse Current V = VREF x 0.9 µA -40 to +85°C — 1 IR = 5mA ±20 — — ΔV Average Reverse Breakdown Voltage R/ΔT IR = 100µA -40 to +85°C ±15 ±150 ppm/°C Temperature Coefficient IR = 10µA ±15 — — +25°C 0.2 — 2µA < IR < 100µA -40 to +85°C — 0.6 ΔVR Reverse Breakdown Change with Current mV 25°C 10 — 100µA < IR < 5mA -40 to +85°C — 20 IRMIN Minimal Operating Current — 1 2 µA ZR Dynamic Output Impedance IR = 2mA, f = 120Hz, IAC = 0.1IR 2 — Ω I e R = 100µ A n Noise Voltage 55 — µV 10Hz < f < 10kHz RMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +85°C 0.08 — % ZXRE330 3 of 9 September 2023 Document number: DS36772 Rev 4 - 2
www.diodes.com
© 2023 Copyright Diodes Incorporated. All Rights Reserved.