Datasheet ZXRE125 (Diodes) - 2
| 制造商 | Diodes |
| 描述 | Sot23 Micropower 1.22V Voltage Reference |
| 页数 / 页 | 5 / 2 — A Product Line of. ZXRE125. Absolute Maximum Ratings (Voltages to GND … |
| 文件格式/大小 | PDF / 104 Kb |
| 文件语言 | 英语 |
A Product Line of. ZXRE125. Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated). Parameter Symbol. Rating. Unit
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A Product Line of
Diodes Incorporated
ZXRE125 Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Symbol Rating Unit
Reverse Current VZ 30 mA Forward Current 10 mA Operating Temperature TOMP -40 to 85 °C Storage Temperature TSTG -55 to 125 °C Power Dissipation (TAMB = 25°C) PD 330 mW
Electrical Characteristics (Test conditions: Tamb = 25°C, unless otherwise specified.) Symbol Parameter Condition Min. Typ. Max. Tol. (%) Unit
1.214 1.220 1.226 C/0.5(1) 1.208 1.220 1.232 D/1 VR Reverse breakdown voltage IR = 100µA V 1.196 1.220 1.244 E/2 1.183 1.220 1.257 F/3 IMIN Minimum operating current 4 8 µA IR Recommended operating current 0.008 20 mA (*) Average reverse breakdown TC I ppm/°C voltage temperature coefficient R(min) to IR(max) 20 75 ΔVR Reverse Breakdown Change IR = 30μA to 1mA 1 mV ΔIR with Current Voltage IR = 1mA to 12mA 10 I R = 1mA Z Ω R Reverse dynamic impedance f = 100Hz 0.2 0.6 IAC = 0.1IR I E R = 8µA to 100µA N Wideband noise voltage 60 µV(rms) f = 10Hz to 10kHz Notes: 1. (V (*) R(MAX) – VR(MIN)) x 1000000 TC = VR x (T(MAX) – T(MIN)) Note: VR(MAX) - VR(MIN) is the maximum deviation in reference voltage measured over the full operating temperature range. ZXRE125 2 of 5 June 2010 Document number: DS32170 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated
Diodes Incorporated
ZXRE125 Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Symbol Rating Unit
Reverse Current VZ 30 mA Forward Current 10 mA Operating Temperature TOMP -40 to 85 °C Storage Temperature TSTG -55 to 125 °C Power Dissipation (TAMB = 25°C) PD 330 mW
Electrical Characteristics (Test conditions: Tamb = 25°C, unless otherwise specified.) Symbol Parameter Condition Min. Typ. Max. Tol. (%) Unit
1.214 1.220 1.226 C/0.5(1) 1.208 1.220 1.232 D/1 VR Reverse breakdown voltage IR = 100µA V 1.196 1.220 1.244 E/2 1.183 1.220 1.257 F/3 IMIN Minimum operating current 4 8 µA IR Recommended operating current 0.008 20 mA (*) Average reverse breakdown TC I ppm/°C voltage temperature coefficient R(min) to IR(max) 20 75 ΔVR Reverse Breakdown Change IR = 30μA to 1mA 1 mV ΔIR with Current Voltage IR = 1mA to 12mA 10 I R = 1mA Z Ω R Reverse dynamic impedance f = 100Hz 0.2 0.6 IAC = 0.1IR I E R = 8µA to 100µA N Wideband noise voltage 60 µV(rms) f = 10Hz to 10kHz Notes: 1. (V (*) R(MAX) – VR(MIN)) x 1000000 TC = VR x (T(MAX) – T(MIN)) Note: VR(MAX) - VR(MIN) is the maximum deviation in reference voltage measured over the full operating temperature range. ZXRE125 2 of 5 June 2010 Document number: DS32170 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated