Datasheet MTP20N20E (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 20 Amps, 200 Volts |
| 页数 / 页 | 9 / 2 — Preferred Device. N−Channel TO−220. http://onsemi.com. 20 AMPERES. 200 … |
| 文件格式/大小 | PDF / 306 Kb |
| 文件语言 | 英语 |
Preferred Device. N−Channel TO−220. http://onsemi.com. 20 AMPERES. 200 VOLTS. RDS(on) = 160 m. N−Channel. MAXIMUM RATINGS. Rating. Symbol
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MTP20N20E
Preferred Device
Power MOSFET 20 Amps, 200 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
http://onsemi.com
low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly
20 AMPERES
well suited for bridge circuits where diode speed and commutating
200 VOLTS
safe operating areas are critical and offer additional safety margin
RDS(on) = 160 m
Ω against unexpected voltage transients. • Avalanche Energy Specified
N−Channel
• Source−to−Drain Diode Recovery Time Comparable to a D Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) S
Rating Symbol Value Unit
Drain−Source Voltage VDSS 200 Vdc
MARKING DIAGRAM
Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 200 Vdc
& PIN ASSIGNMENT
Gate−Source Voltage 4 4 − Continuous V Drain GS ± 20 Vdc − Non−Repetitive (tp ≤ 10 ms) VGSM ± 40 Vpk Drain − Continuous ID 20 Adc − Continuous @ 100°C ID 12
TO−220AB
− Single Pulse (tp ≤ 10 µs) IDM 60 Apk
CASE 221A STYLE 5
MTP20N20E Total Power Dissipation PD 125 Watts LLYWW Derate above 25°C 1.0 W/°C 1 Operating and Storage Temperature TJ, Tstg −55 to °C 2 1 3 Range 150 3 Gate Source Single Pulse Drain−to−Source Avalanche EAS 600 mJ 2 Energy − Starting TJ = 25°C Drain (VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω) MTP20N20E = Device Code Thermal Resistance °C/W LL = Location Code − Junction to Case R Y = Year θJC 1.00 − Junction to Ambient R WW = Work Week θJA 62.5 Maximum Lead Temperature for Soldering TL 260 °C
ORDERING INFORMATION
Purposes, 1/8″ from case for 10 seconds
Device Package Shipping
MTP20N20E TO−220AB 50 Units/Rail
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
February, 2005 − Rev. XXX MTP20N20E/D
Preferred Device
Power MOSFET 20 Amps, 200 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
http://onsemi.com
low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly
20 AMPERES
well suited for bridge circuits where diode speed and commutating
200 VOLTS
safe operating areas are critical and offer additional safety margin
RDS(on) = 160 m
Ω against unexpected voltage transients. • Avalanche Energy Specified
N−Channel
• Source−to−Drain Diode Recovery Time Comparable to a D Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) S
Rating Symbol Value Unit
Drain−Source Voltage VDSS 200 Vdc
MARKING DIAGRAM
Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 200 Vdc
& PIN ASSIGNMENT
Gate−Source Voltage 4 4 − Continuous V Drain GS ± 20 Vdc − Non−Repetitive (tp ≤ 10 ms) VGSM ± 40 Vpk Drain − Continuous ID 20 Adc − Continuous @ 100°C ID 12
TO−220AB
− Single Pulse (tp ≤ 10 µs) IDM 60 Apk
CASE 221A STYLE 5
MTP20N20E Total Power Dissipation PD 125 Watts LLYWW Derate above 25°C 1.0 W/°C 1 Operating and Storage Temperature TJ, Tstg −55 to °C 2 1 3 Range 150 3 Gate Source Single Pulse Drain−to−Source Avalanche EAS 600 mJ 2 Energy − Starting TJ = 25°C Drain (VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω) MTP20N20E = Device Code Thermal Resistance °C/W LL = Location Code − Junction to Case R Y = Year θJC 1.00 − Junction to Ambient R WW = Work Week θJA 62.5 Maximum Lead Temperature for Soldering TL 260 °C
ORDERING INFORMATION
Purposes, 1/8″ from case for 10 seconds
Device Package Shipping
MTP20N20E TO−220AB 50 Units/Rail
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
February, 2005 − Rev. XXX MTP20N20E/D