Datasheet MTP33N10E (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 33 Amps, 100 Volts |
| 页数 / 页 | 8 / 4 — MTP33N10E. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| 文件格式/大小 | PDF / 269 Kb |
| 文件语言 | 英语 |
MTP33N10E. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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MTP33N10E TYPICAL ELECTRICAL CHARACTERISTICS
90 90 TJ = 25°C VGS = 10 V VDS ≥ 10 V 80 80 TJ = −55°C 70 9 V 70 (AMPS) (AMPS) 25°C 60 60 8 V 50 50 100°C 40 40 7 V 30 30 , DRAIN CURRENT , DRAIN CURRENT I D 20 6 V I D 20 10 5 V 10 0 0 0 1 2 3 4 5 6 7 8 9 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.09 0.053 T V J = 25°C GS = 10 V 0.051 0.08 ANCE (OHMS) TJ = 100°C ANCE (OHMS) 0.049 0.07 0.047 0.06 0.045 VGS = 10 V 0.05 25°C O−SOURCE RESIST O−SOURCE RESIST 0.043 0.04 0.041 − 55°C 15 V , DRAIN−T 0.03 , DRAIN−T 0.039 DS(on) 0.02 DS(on) 0.037 R 0 6 12 18 24 30 36 42 48 54 60 66 R 5 11 17 23 29 35 41 47 53 59 65 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.0 10000 V V GS = 0 V GS = 10 V ANCE 1.8 ID = 16.5 A 1.6 1000 TJ = 125°C 1.4 O−SOURCE RESIST 1.2 100°C , LEAKAGE (nA) (NORMALIZED) 100 1.0 I DSS , DRAIN−T 25°C 0.8 DS(on)R 0.6 10 −50 −25 0 25 50 75 100 125 150 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3
90 90 TJ = 25°C VGS = 10 V VDS ≥ 10 V 80 80 TJ = −55°C 70 9 V 70 (AMPS) (AMPS) 25°C 60 60 8 V 50 50 100°C 40 40 7 V 30 30 , DRAIN CURRENT , DRAIN CURRENT I D 20 6 V I D 20 10 5 V 10 0 0 0 1 2 3 4 5 6 7 8 9 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.09 0.053 T V J = 25°C GS = 10 V 0.051 0.08 ANCE (OHMS) TJ = 100°C ANCE (OHMS) 0.049 0.07 0.047 0.06 0.045 VGS = 10 V 0.05 25°C O−SOURCE RESIST O−SOURCE RESIST 0.043 0.04 0.041 − 55°C 15 V , DRAIN−T 0.03 , DRAIN−T 0.039 DS(on) 0.02 DS(on) 0.037 R 0 6 12 18 24 30 36 42 48 54 60 66 R 5 11 17 23 29 35 41 47 53 59 65 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.0 10000 V V GS = 0 V GS = 10 V ANCE 1.8 ID = 16.5 A 1.6 1000 TJ = 125°C 1.4 O−SOURCE RESIST 1.2 100°C , LEAKAGE (nA) (NORMALIZED) 100 1.0 I DSS , DRAIN−T 25°C 0.8 DS(on)R 0.6 10 −50 −25 0 25 50 75 100 125 150 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3