Datasheet IRFP22N60K (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Power MOSFET in TO-247AC package |
| 页数 / 页 | 10 / 3 — IRFP22N60K. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output … |
| 文件格式/大小 | PDF / 504 Kb |
| 文件语言 | 英语 |
IRFP22N60K. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics
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IRFP22N60K
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 3.0 VGS I = D 22A TOP 15V 12V ) 10V ce 2.5 A 10 n ( 8.0V a t 7.0V st n si e 6.0V rr 5.5V Re u 2.0 BOTTOM 5.0V n C 1 O e cr rce u u o 1.5 o -S S- 0.1 o -to t (Normalized) - in a ni 5.0V 1.0 ar , Dr D , 0.01 I D r DS(on) 0.5 20µs PULSE WIDTH Tj = 25°C V = 10V 0.001 GS 0.0 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 T V J, Junction Temperature (° C) DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature
100 100000 VGS VGS = 0V, f = 1 MHZ TOP 15V 12V C iss = C gs + C gd , C ds ) 10V SHORTED A( 8.0V t 7.0V Crss = Cgd n 10000 e 6.0V r ) C r oss = Cds + Cgd 10 5.5V F u BOTTOM 5.0V p( C Ciss e e c cr n u at o i 1000 c S- 5.0V a o p t- a n 1 Coss i C a , r C D 100 , I D 20µs PULSE WIDTH Crss Tj = 150°C 0.1 10 0.1 1 10 100 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100.00 20 ID= 22A V ) T ) DS= 480V A ( J = 150°C V( VDS= 300V 16 t 10.00 e VDS= 120V n g e a r tl r o u V C 12 e e c c r r 1.00 u u o o S S - - TJ = 25°C o o t 8 t - - e n t i a ar G 0.10 D , S 4 I D GV VDS = 50V 20µs PULSE WIDTH 0.01 0 5.0 6.0 7.0 8.0 9.0 10.0 0 40 80 120 160 V Q GS , Gate-to-Source Voltage (V) G Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S22-0046, Rev. C, 24-Jan-2021
3
Document Number: 91208 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 3.0 VGS I = D 22A TOP 15V 12V ) 10V ce 2.5 A 10 n ( 8.0V a t 7.0V st n si e 6.0V rr 5.5V Re u 2.0 BOTTOM 5.0V n C 1 O e cr rce u u o 1.5 o -S S- 0.1 o -to t (Normalized) - in a ni 5.0V 1.0 ar , Dr D , 0.01 I D r DS(on) 0.5 20µs PULSE WIDTH Tj = 25°C V = 10V 0.001 GS 0.0 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 T V J, Junction Temperature (° C) DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature
100 100000 VGS VGS = 0V, f = 1 MHZ TOP 15V 12V C iss = C gs + C gd , C ds ) 10V SHORTED A( 8.0V t 7.0V Crss = Cgd n 10000 e 6.0V r ) C r oss = Cds + Cgd 10 5.5V F u BOTTOM 5.0V p( C Ciss e e c cr n u at o i 1000 c S- 5.0V a o p t- a n 1 Coss i C a , r C D 100 , I D 20µs PULSE WIDTH Crss Tj = 150°C 0.1 10 0.1 1 10 100 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100.00 20 ID= 22A V ) T ) DS= 480V A ( J = 150°C V( VDS= 300V 16 t 10.00 e VDS= 120V n g e a r tl r o u V C 12 e e c c r r 1.00 u u o o S S - - TJ = 25°C o o t 8 t - - e n t i a ar G 0.10 D , S 4 I D GV VDS = 50V 20µs PULSE WIDTH 0.01 0 5.0 6.0 7.0 8.0 9.0 10.0 0 40 80 120 160 V Q GS , Gate-to-Source Voltage (V) G Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S22-0046, Rev. C, 24-Jan-2021
3
Document Number: 91208 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000