Datasheet BAS40 (Taiwan Semiconductor) - 2

BAS40 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 357 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN MAX UNIT IF = 1mA, TJ = 25°C 0.38 Forward voltage per diode (1) VF - V IF = 40mA, TJ = 25°C 1.00 Reverse current per diode (2) VR=30V TJ = 25°C IR - 0.2 μA Reverse Breakdown Voltage IR=10μA V(BR) 40 - V Junction capacitance f=1 MHz, VR=1V CJ - 5.0 pF IF=IR=10mA, RL=100Ω, Reverse Recovery Time trr - 5.0 ns IRR=1mA Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS4xxxx RF SOT-23 3K / 7" Reel BAS4xxxx RFG SOT-23 3K / 7" Reel Note: 1. "xxxx" defines part no. from "0" to "0-06" 2 Version: H2001