Datasheet LM4051 (Analog Devices) - 7
| 制造商 | Analog Devices |
| 描述 | 50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages |
| 页数 / 页 | 14 / 7 — LM4050/LM4051. Electrical Characteristics—5.000V. PARAMETER. SYMBOL. … |
| 文件格式/大小 | PDF / 2.2 Mb |
| 文件语言 | 英语 |
LM4050/LM4051. Electrical Characteristics—5.000V. PARAMETER. SYMBOL. CONDITIONS. MIN. TYP. MAX. UNITS. Note 2:. Note 3:. Note 4:
该数据表的模型线
- LM4050AEM3-2.1+ LM4050AEM3-2.1+T LM4050AEM3-2.1/V+ LM4050AEM3-2.1/V+T LM4050AEM3-2.5+ LM4050AEM3-2.5+T LM4050AEM3-2.5/V+ LM4050AEM3-2.5/V+T LM4050AEM3-3.0+ LM4050AEM3-3.0+T LM4050AEM3-4.1+ LM4050AEM3-4.1+T LM4050AEM3-4.1/V+ LM4050AEM3-4.1/V+T LM4050AEM3-5.0+ LM4050AEM3-5.0+T LM4050AEM3-5.0/V+ LM4050AEM3-5.0/V+T LM4050AEX3-2.1+ LM4050AEX3-2.1+T LM4050AEX3-2.5+ LM4050AEX3-2.5+T LM4050AEX3-2.5/V+ LM4050AEX3-2.5/V+T LM4050AEX3-3.0+T LM4050AEX3-3.3+ LM4050AEX3-3.3+T LM4050AEX3-3.3/V+ LM4050AEX3-3.3/V+T LM4050AEX3-5.0+ LM4050AEX3-5.0+T LM4050BEM3-2.5+ LM4050BEM3-2.5+T LM4050BEM3-2.5/V+ LM4050BEM3-2.5/V+T LM4050BEM3-3.0+ LM4050BEM3-3.0+T LM4050BEM3-3.0/V+T LM4050BEM3-4.1+ LM4050BEM3-4.1+T LM4050BEM3-4.1/V+ LM4050BEM3-4.1/V+T LM4050BEM3-5.0+ LM4050BEM3-5.0+T LM4050BEX3-2.1+T LM4050BEX3-2.5+ LM4050BEX3-2.5+T LM4050BEX3-2.5/V+ LM4050BEX3-2.5/V+T LM4050BEX3-3.0+ LM4050BEX3-3.0+T LM4050BEX3-3.3+ LM4050BEX3-3.3+T LM4050BEX3-5.0+ LM4050BEX3-5.0+T LM4050CEM3-2.1+ LM4050CEM3-2.1+T LM4050CEM3-2.5+ LM4050CEM3-2.5+T LM4050CEM3-4.1+ LM4050CEM3-4.1+T LM4050CEM3-5.0+ LM4050CEM3-5.0+T LM4050CEM3-5.0/V+ LM4050CEM3-5.0/V+T LM4050CEX3-2.5+ LM4050CEX3-2.5+T LM4050CEX3-3.0+ LM4050CEX3-3.0+T LM4050CEX3-3.3+ LM4050CEX3-3.3+T LM4050CEX3-3.3/V+ LM4050CEX3-3.3/V+T LM4050CEX3-5.0+ LM4050CEX3-5.0+T
文件文字版本
LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
Electrical Characteristics—5.000V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 4.9950 5.0000 5.0050 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 4.9900 5.0000 5.0100 V LM4050C (0.5%) 4.9750 5.0000 5.0250 LM4050A ±5.0 ±30 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±10 ±35 mV LM4050C ±25 ±50 Minimum Operating Current IRMIN 54 80 µA Average Reverse Voltage IR = 10mA ±30 Temperature Coefficient DVR/DT IR = 1mA ±20 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.5 1.4 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 3.5 12.0 Reverse Dynamic Impedance (Note 4) ZR IR = 1mA, f = 120Hz, IAC = 0.1IR 0.5 1.1 Ω Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 80 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm
Note 2:
All devices are 100% production tested at +25°C and are guaranteed by design for TA = TMIN to TMAX, as specified.
Note 3:
The limit over the full temperature range for the reverse breakdown voltage tolerance is defined as: [VRTOL] ±[(∆VR / ∆T) X (max∆T) X (VR)] where ∆VR / ∆T is the VR temperature coefficient, max∆T is the difference from the +25°C reference point to TMIN or TMAX, and VR is the reverse breakdown voltage. The total tolerance over the full temperature range for the different grades where max∆T = +100°C is shown below: • A grade: ±0.6% = ±0.1% ±50ppm/°C x 100°C • B grade: ±0.7% = ±0.2% ±50ppm/°C x 100°C • C grade: ±1.0% = ±0.5% ±50ppm/°C x 100°C
Note 4:
Guaranteed by design. www.analog.com Analog Devices │ 7
50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
Electrical Characteristics—5.000V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 4.9950 5.0000 5.0050 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 4.9900 5.0000 5.0100 V LM4050C (0.5%) 4.9750 5.0000 5.0250 LM4050A ±5.0 ±30 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±10 ±35 mV LM4050C ±25 ±50 Minimum Operating Current IRMIN 54 80 µA Average Reverse Voltage IR = 10mA ±30 Temperature Coefficient DVR/DT IR = 1mA ±20 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.5 1.4 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 3.5 12.0 Reverse Dynamic Impedance (Note 4) ZR IR = 1mA, f = 120Hz, IAC = 0.1IR 0.5 1.1 Ω Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 80 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm
Note 2:
All devices are 100% production tested at +25°C and are guaranteed by design for TA = TMIN to TMAX, as specified.
Note 3:
The limit over the full temperature range for the reverse breakdown voltage tolerance is defined as: [VRTOL] ±[(∆VR / ∆T) X (max∆T) X (VR)] where ∆VR / ∆T is the VR temperature coefficient, max∆T is the difference from the +25°C reference point to TMIN or TMAX, and VR is the reverse breakdown voltage. The total tolerance over the full temperature range for the different grades where max∆T = +100°C is shown below: • A grade: ±0.6% = ±0.1% ±50ppm/°C x 100°C • B grade: ±0.7% = ±0.2% ±50ppm/°C x 100°C • C grade: ±1.0% = ±0.5% ±50ppm/°C x 100°C
Note 4:
Guaranteed by design. www.analog.com Analog Devices │ 7