Datasheet DMP3099L (Diodes) - 3
| 制造商 | Diodes |
| 描述 | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 页数 / 页 | 7 / 3 — DMP3099L. Electrical Characteristics. Characteristic. Symbol. Min. Typ. … |
| 文件格式/大小 | PDF / 417 Kb |
| 文件语言 | 英语 |
DMP3099L. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. OFF CHARACTERISTICS (Note 7)
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DMP3099L Electrical Characteristics
(@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) -1.0 — -2.1 V VDS = VGS, ID = -250µA V Static Drain-Source On-Resistance R GS = -10V, ID = -3.8A DS(on) — — 65 99 mΩ VGS = -4.5V, ID = -3.0A Forward Transfer Admittance |Yfs| — 3.6 — S VDS = -5V, ID = -2.7A Diode Forward Voltage (Note 6) VSD — — -1.26 V VGS = 0V, IS = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 563 — pF VDS = -25V, VGS = 0V, Output Capacitance Coss — 48 — pF f = 1.0MHz Reverse Transfer Capacitance Crss — 41 — pF Gate Resistance RG — 10.3 — Ω VGS = 0V VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
— 5.2 — VDS = -15V, VGS = -4.5V, Total Gate Charge Qg ID = -3.8A — 11 — nC VDS = -15V, VGS = -10V, Gate-Source Charge Qgs — 1.7 — ID = -3.8A Gate-Drain Charge Qgd — 1.9 — Turn-On Delay Time td(on) — 4.8 — Rise Time tr — 5.0 — ns VDS = -15V, VGS = -10V, Turn-Off Delay Time td(off) — 31 — ID = -1A, RG = 6.0Ω Fall Time tf — 15 — Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec. 6. Pulse width ≤10µS, Duty Cycle ≤1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP3099L 3 of 7 July 2021 Document number: DS36081 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Marking Information Suggested Pad Layout
(@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) -1.0 — -2.1 V VDS = VGS, ID = -250µA V Static Drain-Source On-Resistance R GS = -10V, ID = -3.8A DS(on) — — 65 99 mΩ VGS = -4.5V, ID = -3.0A Forward Transfer Admittance |Yfs| — 3.6 — S VDS = -5V, ID = -2.7A Diode Forward Voltage (Note 6) VSD — — -1.26 V VGS = 0V, IS = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 563 — pF VDS = -25V, VGS = 0V, Output Capacitance Coss — 48 — pF f = 1.0MHz Reverse Transfer Capacitance Crss — 41 — pF Gate Resistance RG — 10.3 — Ω VGS = 0V VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
— 5.2 — VDS = -15V, VGS = -4.5V, Total Gate Charge Qg ID = -3.8A — 11 — nC VDS = -15V, VGS = -10V, Gate-Source Charge Qgs — 1.7 — ID = -3.8A Gate-Drain Charge Qgd — 1.9 — Turn-On Delay Time td(on) — 4.8 — Rise Time tr — 5.0 — ns VDS = -15V, VGS = -10V, Turn-Off Delay Time td(off) — 31 — ID = -1A, RG = 6.0Ω Fall Time tf — 15 — Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec. 6. Pulse width ≤10µS, Duty Cycle ≤1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP3099L 3 of 7 July 2021 Document number: DS36081 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Marking Information Suggested Pad Layout