Datasheet FDC604P (Fairchild) - 2
| 制造商 | Fairchild |
| 描述 | P-Channel 1.8V Specified PowerTrench MOSFET |
| 页数 / 页 | 8 / 2 — F DC60. Electrical Characteristics. Symbol. Parameter. Test Conditions. … |
| 文件格式/大小 | PDF / 377 Kb |
| 文件语言 | 英语 |
F DC60. Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ Max Units. Off Characteristics. On Characteristics
该数据表的模型线
文件文字版本
F DC60 Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units 4P Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA,Referenced to 25°C –12 mV/°C ===∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.7 –1.5 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C 3 mV/°C ===∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –4.5 V, ID = –5.5 A 0.024 0.033 Ω On–Resistance VGS = –2.5 V, ID = –4.8 A 0.030 0.043 VGS = –1.8 V, ID = –4.0 A 0.042 0.060 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –5 V, ID = –3.5 A 23 S
Dynamic Characteristics
Ciss Input Capacitance V 1926 pF DS = –10 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 530 pF Crss Reverse Transfer Capacitance 185 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time VDD = –10 V, ID = –1 A, 13 23 ns t V r Turn–On Rise Time GS = –4.5 V, RGEN = 6 Ω 11 20 ns td(off) Turn–Off Delay Time 90 144 ns tf Turn–Off Fall Time 45 72 ns Qg Total Gate Charge VDS = –10 V, ID = –3.5 A, 19 30 nC Q VGS = –4.5 V gs Gate–Source Charge 4 nC Qgd Gate–Drain Charge 7.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A VSD Drain–Source Diode Forward VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V Voltage
Notes: 1.
R is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain θJA pins. R is guaranteed by design while R is determined by the user's board design. θJC θCA a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0% FDC604P Rev B(W)
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units 4P Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA,Referenced to 25°C –12 mV/°C ===∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.7 –1.5 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C 3 mV/°C ===∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –4.5 V, ID = –5.5 A 0.024 0.033 Ω On–Resistance VGS = –2.5 V, ID = –4.8 A 0.030 0.043 VGS = –1.8 V, ID = –4.0 A 0.042 0.060 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –5 V, ID = –3.5 A 23 S
Dynamic Characteristics
Ciss Input Capacitance V 1926 pF DS = –10 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 530 pF Crss Reverse Transfer Capacitance 185 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time VDD = –10 V, ID = –1 A, 13 23 ns t V r Turn–On Rise Time GS = –4.5 V, RGEN = 6 Ω 11 20 ns td(off) Turn–Off Delay Time 90 144 ns tf Turn–Off Fall Time 45 72 ns Qg Total Gate Charge VDS = –10 V, ID = –3.5 A, 19 30 nC Q VGS = –4.5 V gs Gate–Source Charge 4 nC Qgd Gate–Drain Charge 7.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A VSD Drain–Source Diode Forward VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V Voltage
Notes: 1.
R is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain θJA pins. R is guaranteed by design while R is determined by the user's board design. θJC θCA a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0% FDC604P Rev B(W)