Datasheet MJL1302A (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Bipolar Power Transistor, PNP, 15 A, 260 V, 200 Watt |
| 页数 / 页 | 6 / 4 — MJL3281A (NPN) MJL1302A (PNP). TYPICAL CHARACTERISTICS. PNP MJL1302A. NPN … |
| 文件格式/大小 | PDF / 184 Kb |
| 文件语言 | 英语 |
MJL3281A (NPN) MJL1302A (PNP). TYPICAL CHARACTERISTICS. PNP MJL1302A. NPN MJL3281A. Figure 7. Typical Base−Emitter Voltage
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MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A
10 10 TS) TJ = 25C TS) TJ = 25C TAGE (VOL TAGE (VOL VCE = 5 V (DASHED) VCE = 5 V (DASHED) 1.0 1.0 VCE = 20 V (SOLID) VCE = 20 V (SOLID) , BASE-EMITTER VOL , BASE-EMITTER VOL BE(on)V BE(on)V 0.1 0.1 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. Typical Base−Emitter Voltage Figure 8. Typical Base−Emitter Voltage PNP MJL1302A NPN MJL3281A
10000 10000 Cib Cib ANCE (pF) C ANCE (pF) 1000 ob 1000 ACIT ACIT Cob C, CAP C, CAP TJ = 25C TJ = 25C ftest = 1 MHz ftest = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 9. MJL1302A Typical Capacitance Figure 10. MJL3281A Typical Capacitance
100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary 10 ms (AMPS) breakdown. Safe operating area curves indicate IC − VCE lim- 10 its of the transistor that must be observed for reliable opera- 50 ms tion; i.e., the transistor must not be subjected to greater dissi- 1 sec pation than the curves indicate. OR CURRENT The data of Figure 11 is based on TJ(pk) = 150C; TC is vari- 1.0 able depending on conditions. At high case temperatures, 250 ms thermal limitations will reduce the power than can be handled , COLLECT I C to values less than the limitations imposed by second break- down. 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area www.onsemi.com 4
MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A
10 10 TS) TJ = 25C TS) TJ = 25C TAGE (VOL TAGE (VOL VCE = 5 V (DASHED) VCE = 5 V (DASHED) 1.0 1.0 VCE = 20 V (SOLID) VCE = 20 V (SOLID) , BASE-EMITTER VOL , BASE-EMITTER VOL BE(on)V BE(on)V 0.1 0.1 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. Typical Base−Emitter Voltage Figure 8. Typical Base−Emitter Voltage PNP MJL1302A NPN MJL3281A
10000 10000 Cib Cib ANCE (pF) C ANCE (pF) 1000 ob 1000 ACIT ACIT Cob C, CAP C, CAP TJ = 25C TJ = 25C ftest = 1 MHz ftest = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 9. MJL1302A Typical Capacitance Figure 10. MJL3281A Typical Capacitance
100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary 10 ms (AMPS) breakdown. Safe operating area curves indicate IC − VCE lim- 10 its of the transistor that must be observed for reliable opera- 50 ms tion; i.e., the transistor must not be subjected to greater dissi- 1 sec pation than the curves indicate. OR CURRENT The data of Figure 11 is based on TJ(pk) = 150C; TC is vari- 1.0 able depending on conditions. At high case temperatures, 250 ms thermal limitations will reduce the power than can be handled , COLLECT I C to values less than the limitations imposed by second break- down. 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area www.onsemi.com 4