Preliminary Datasheet EPC2103 (Efficient Power Conversion) - 7
| 制造商 | Efficient Power Conversion |
| 描述 | Enhancement-Mode GaN Power Transistor Half Bridge |
| 页数 / 页 | 10 / 7 — EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. Figure 9a:. Figure 9b:
该数据表的模型线
EPC2103
文件文字版本
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Figure 9a: Figure 9b: EPC2103-Q1: Normalized Threshold Voltage vs. Temperature EPC2103-Q2: Normalized Threshold Voltage vs. Temperature 1.4 1.4 1.3 ge 1.3 ge ta ta ol 1.2 ol V I 1.2 D = 7 mA V ID = 7 mA d d 1.1 1.1 hol hol s s e e 1 1 hr hr T T d 0.9 d e 0.9 e liz liz a 0.8 a 0.8 m m or or 0.7 N 0.7 N 0.6 0.6 -25 0 25 50 75 100 125 150 175 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C)
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 7
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 7