Preliminary Datasheet EPC2103 (Efficient Power Conversion) - 9
| 制造商 | Efficient Power Conversion |
| 描述 | Enhancement-Mode GaN Power Transistor Half Bridge |
| 页数 / 页 | 10 / 9 — EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet
该数据表的模型线
EPC2103
文件文字版本
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet RECOMMENDED LAND PATTERN (Units in µm) RECOMMENDED STENCIL DESIGN (Units in µm) Recommended stencil should be 4mil (100µm) thick, must be laser cut, openings per drawing. Intended for use with SAC305 Type 4 solder, reference 88.5% metals content Additional assembly resources available at http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 9
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 9