Datasheet IRF530N (International Rectifier) - 3

制造商International Rectifier
描述HEXFET Power MOSFET
页数 / 页9 / 3 — Fig 1. Fig 2. Fig 3. Fig 4
文件格式/大小PDF / 222 Kb
文件语言英语

Fig 1. Fig 2. Fig 3. Fig 4

Fig 1 Fig 2 Fig 3 Fig 4

文件文字版本

IRF530N 100 100 VGS VGS TOP 15V 15V 10V 10V 8.0V 8.0V 7.0V TOP 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V 4.5V 10 4.5V 10 D I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 J °C T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 3.5 ID = 15A 3.0 T = 25 C ° J 2.5 T = 175 C ° 2.0 J 1.5 (Normalized) 1.0 I , Drain-to-Source Current (A) D 0.5 V = 50V DS DS(on) 20µs PULSE WIDTH V = 10V R , Drain-to-Source On Resistance GS 10 0.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C) ° GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3