Datasheet IRF530N (International Rectifier) - 7
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 7 — Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14 |
| 文件格式/大小 | PDF / 222 Kb |
| 文件语言 | 英语 |
Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14
文件文字版本
IRF530N
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
* • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • ISD controlled by Duty Factor "D" V - DD • D.U.T. - Device Under Test VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For N-channel HEXFET® power MOSFETs www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
* • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • ISD controlled by Duty Factor "D" V - DD • D.U.T. - Device Under Test VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For N-channel HEXFET® power MOSFETs www.irf.com 7