Datasheet IRF5305 - 6
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 133 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
文件文字版本
IRF5305 L V D S 7 0 0 ) J I D - m TO P -6.6 A R G D .U .T ( + V 6 0 0 -11 A D D gy B O T T O M -1 6A IA S A er D R IV E R - 2 0 V n t 0 .0 1 5 0 0 p Ω he E 4 0 0 lanc a v A e 3 0 0 1 5 V ls u P le 2 0 0 g
Fig 12a.
Unclamped Inductive Test Circuit in S 1 0 0 I A S , AS E V = -2 5V D D 0 A 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 S ta rtin g TJ , Junction Tem perature (°C )
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V -10V .3µF - Q V GS QGD D.U.T. + DS V V GS G -3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit in S 1 0 0 I A S , AS E V = -2 5V D D 0 A 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 S ta rtin g TJ , Junction Tem perature (°C )
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V -10V .3µF - Q V GS QGD D.U.T. + DS V V GS G -3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com