Datasheet IRF530 (On Semiconductor)
| 制造商 | On Semiconductor |
| 描述 | TMOS E−FET Power Field Effect. Transistor N−Channel Enhancement−Mode Silicon Gate |
| 页数 / 页 | 7 / 1 — N−Channel Enhancement−Mode Silicon. http://onsemi.com. Gate. TMOS POWER … |
| 文件格式/大小 | PDF / 192 Kb |
| 文件语言 | 英语 |
N−Channel Enhancement−Mode Silicon. http://onsemi.com. Gate. TMOS POWER FET. 14 AMPERES, 100 VOLTS. DS(on) = 0.140. CASE 221A−09
文件文字版本
IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon http://onsemi.com Gate TMOS POWER FET
This advanced TMOS power FET is designed to withstand high
14 AMPERES, 100 VOLTS
energy in the avalanche and commutation modes. This new energy
R
efficient design also offers a drain−to−source diode with a fast
DS(on) = 0.140
W recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
CASE 221A−09 TO-220AB
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • I D DSS and VDS(on) Specified at Elevated Temperature ® G
MAXIMUM RATINGS
(T S C = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc Gate−to−Source Voltage — Continuous VGS ± 20 Vdc Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) VGSM ± 25 Vdc Drain Current — Continuous ID 14 Adc Drain Current — Continuous @ 100°C ID 10 Drain Current — Single Pulse (tp ≤ 10 mS) IDM 49 Apk Total Power Dissipation @ TC = 25°C PD 78 Watts Derate above 25°C 0.63 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
(TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — STARTING TJ = 25°C EAS mJ (VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W) 98
THERMAL CHARACTERISTICS
Thermal Resistance — Junction−to−Case° RθJC 1.60 °C/W Thermal Resistance — Junction−to−Ambient° RθJA 62.5 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 275 °C E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 2 IRF530/D
N−Channel Enhancement−Mode Silicon http://onsemi.com Gate TMOS POWER FET
This advanced TMOS power FET is designed to withstand high
14 AMPERES, 100 VOLTS
energy in the avalanche and commutation modes. This new energy
R
efficient design also offers a drain−to−source diode with a fast
DS(on) = 0.140
W recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
CASE 221A−09 TO-220AB
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • I D DSS and VDS(on) Specified at Elevated Temperature ® G
MAXIMUM RATINGS
(T S C = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc Gate−to−Source Voltage — Continuous VGS ± 20 Vdc Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) VGSM ± 25 Vdc Drain Current — Continuous ID 14 Adc Drain Current — Continuous @ 100°C ID 10 Drain Current — Single Pulse (tp ≤ 10 mS) IDM 49 Apk Total Power Dissipation @ TC = 25°C PD 78 Watts Derate above 25°C 0.63 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
(TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — STARTING TJ = 25°C EAS mJ (VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W) 98
THERMAL CHARACTERISTICS
Thermal Resistance — Junction−to−Case° RθJC 1.60 °C/W Thermal Resistance — Junction−to−Ambient° RθJA 62.5 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 275 °C E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 2 IRF530/D