Datasheet AD8129, AD8130 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | Low Cost 270 MHz Differential Receiver Amplifier |
| 页数 / 页 | 41 / 10 — AD8129/AD8130. ABSOLUTE MAXIMUM RATINGS. Table 4. Parameter Rating. 1.75. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 804 Kb |
| 文件语言 | 英语 |
AD8129/AD8130. ABSOLUTE MAXIMUM RATINGS. Table 4. Parameter Rating. 1.75. ) 1.50. W (. THERMAL RESISTANCE. TION 1.25. ISSIPA 1.00 D. SOIC
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AD8129/AD8130 ABSOLUTE MAXIMUM RATINGS Table 4.
The power dissipated in the package (PD) is the sum of the
Parameter Rating
quiescent power dissipation and the power dissipated in the Supply Voltage 26.4 V package due to the load drive. The quiescent power is the Power Dissipation Refer to Figure 4 voltage between the supply pins (VS) times the quiescent Input Voltage (Any Input) −VS − 0.3 V to +VS + 0.3 V current (IS). The power dissipated due to the load drive Differential Input Voltage (AD8129) depends upon the particular application. The power due to VS ≥ ±11.5 V ±0.5 V load drive is calculated by multiplying the load current by the Differential Input Voltage (AD8129) associated voltage drop across the device. RMS voltages and VS < ±11.5 V ±6.2 V currents must be used in these calculations. Differential Input Voltage (AD8130) ±8.4 V Storage Temperature Range −65°C to +150°C Airflow reduces θJA. In addition, more metal directly in contact Lead Temperature (Soldering, 10 sec) 300°C with the package leads from metal traces through holes, ground, Junction Temperature 150°C and power planes reduces the θJA. Stresses above those listed under Absolute Maximum Ratings Figure 4 shows the maximum safe power dissipation in the may cause permanent damage to the device. This is a stress package vs. the ambient temperature for the 8-lead SOIC rating only; functional operation of the device at these or any (121°C/W) and MSOP (θJA = 142°C/W) packages on a JEDEC other conditions above those indicated in the operational standard 4-layer board. θJA values are approximations. section of this specification is not implied. Exposure to absolute
1.75
maximum rating conditions for extended periods may affect device reliability.
) 1.50 W ( THERMAL RESISTANCE TION 1.25
θJA is specified for the worst-case conditions, that is, θJA is specified for the device soldered in a circuit board in still air.
ISSIPA 1.00 D SOIC R Table 5. Thermal Resistance E 0.75 Package Type θ MSOP JA Unit POW M U
8-Lead SOIC/4-Layer 121 °C/W
0.50 XIM
8-Lead MSOP/4-Layer 142 °C/W
A M 0.25 Maximum Power Dissipation 0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C)
The maximum safe power dissipation in the AD8129/AD8130 02464-005 Figure 4. Maximum Power Dissipation vs. Temperature packages is limited by the associated rise in junction temp- erature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8129/AD8130. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. C | Page 9 of 40 Document Outline FEATURES APPLICATIONS CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY AD8129/AD8130 SPECIFICATIONS 5 V SPECIFICATIONS ±5 V SPECIFICATIONS ±12 V SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Maximum Power Dissipation ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS AD8130 FREQUENCY RESPONSE CHARACTERISTICS AD8129 FREQUENCY RESPONSE CHARACTERISTICS AD8130 HARMONIC DISTORTION CHARACTERISTICS AD8129 HARMONIC DISTORTION CHARACTERISTICS AD8130 TRANSIENT RESPONSE CHARACTERISTICS AD8129 TRANSIENT RESPONSE CHARACTERISTICS THEORY OF OPERATION OP AMP CONFIGURATION APPLICATIONS BASIC GAIN CIRCUITS TWISTED-PAIR CABLE, COMPOSITE VIDEO RECEIVER WITH EQUALIZATION USING AN AD8130 OUTPUT OFFSET/LEVEL TRANSLATOR RESISTORLESS GAIN OF 2 SUMMER CABLE-TAP AMPLIFIER POWER-DOWN EXTREME OPERATING CONDITIONS POWER DISSIPATION LAYOUT, GROUNDING, AND BYPASSING OUTLINE DIMENSIONS ORDERING GUIDE
AD8129/AD8130 ABSOLUTE MAXIMUM RATINGS Table 4.
The power dissipated in the package (PD) is the sum of the
Parameter Rating
quiescent power dissipation and the power dissipated in the Supply Voltage 26.4 V package due to the load drive. The quiescent power is the Power Dissipation Refer to Figure 4 voltage between the supply pins (VS) times the quiescent Input Voltage (Any Input) −VS − 0.3 V to +VS + 0.3 V current (IS). The power dissipated due to the load drive Differential Input Voltage (AD8129) depends upon the particular application. The power due to VS ≥ ±11.5 V ±0.5 V load drive is calculated by multiplying the load current by the Differential Input Voltage (AD8129) associated voltage drop across the device. RMS voltages and VS < ±11.5 V ±6.2 V currents must be used in these calculations. Differential Input Voltage (AD8130) ±8.4 V Storage Temperature Range −65°C to +150°C Airflow reduces θJA. In addition, more metal directly in contact Lead Temperature (Soldering, 10 sec) 300°C with the package leads from metal traces through holes, ground, Junction Temperature 150°C and power planes reduces the θJA. Stresses above those listed under Absolute Maximum Ratings Figure 4 shows the maximum safe power dissipation in the may cause permanent damage to the device. This is a stress package vs. the ambient temperature for the 8-lead SOIC rating only; functional operation of the device at these or any (121°C/W) and MSOP (θJA = 142°C/W) packages on a JEDEC other conditions above those indicated in the operational standard 4-layer board. θJA values are approximations. section of this specification is not implied. Exposure to absolute
1.75
maximum rating conditions for extended periods may affect device reliability.
) 1.50 W ( THERMAL RESISTANCE TION 1.25
θJA is specified for the worst-case conditions, that is, θJA is specified for the device soldered in a circuit board in still air.
ISSIPA 1.00 D SOIC R Table 5. Thermal Resistance E 0.75 Package Type θ MSOP JA Unit POW M U
8-Lead SOIC/4-Layer 121 °C/W
0.50 XIM
8-Lead MSOP/4-Layer 142 °C/W
A M 0.25 Maximum Power Dissipation 0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C)
The maximum safe power dissipation in the AD8129/AD8130 02464-005 Figure 4. Maximum Power Dissipation vs. Temperature packages is limited by the associated rise in junction temp- erature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8129/AD8130. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. C | Page 9 of 40 Document Outline FEATURES APPLICATIONS CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY AD8129/AD8130 SPECIFICATIONS 5 V SPECIFICATIONS ±5 V SPECIFICATIONS ±12 V SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Maximum Power Dissipation ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS AD8130 FREQUENCY RESPONSE CHARACTERISTICS AD8129 FREQUENCY RESPONSE CHARACTERISTICS AD8130 HARMONIC DISTORTION CHARACTERISTICS AD8129 HARMONIC DISTORTION CHARACTERISTICS AD8130 TRANSIENT RESPONSE CHARACTERISTICS AD8129 TRANSIENT RESPONSE CHARACTERISTICS THEORY OF OPERATION OP AMP CONFIGURATION APPLICATIONS BASIC GAIN CIRCUITS TWISTED-PAIR CABLE, COMPOSITE VIDEO RECEIVER WITH EQUALIZATION USING AN AD8130 OUTPUT OFFSET/LEVEL TRANSLATOR RESISTORLESS GAIN OF 2 SUMMER CABLE-TAP AMPLIFIER POWER-DOWN EXTREME OPERATING CONDITIONS POWER DISSIPATION LAYOUT, GROUNDING, AND BYPASSING OUTLINE DIMENSIONS ORDERING GUIDE